Newcastle University

Background

Professor Anthony O'Neill joined Newcastle University in 1986, having previously worked at Plessey Research (Caswell) Ltd. He has been Siemens Professor of Microelectronics since 1996. In 1994 he was Visiting Scientist at MIT, Cambridge, Ma, USA. In 2002 He became Royal Society Industry Fellow at Atmel, UK. In 2009 he was Visiting Professor at EPFL, Lausanne, Switzerland.

Roles and Responsibilities

*  Director of Research, Electrical and Electronic Engineering
*  Director of nanoLAB University Research Centre
*  Leader of eFutures network for electronics research in UK universities, with more than 200 members
*  Principle Investigator on EPSRC Projects:
          -   Strained Si Platform Grant;
          -   Ferroelectrics for nanoelectronics (FERN);
          -   nanoLAB cross-disciplinary research account (nanoelectronics and biomedical);
          -   eFutures
          -   eFuturesXD
          -   ALIEN:contacts
*  Member of EPSRC College
*  Director of NMI, a UK trade organisation for the electronics industry with more than 150 members

Qualifications

BSc, PhD

Memberships

C Eng, Fellow IET, Senior Member IEEE,

Research Interests

1. Strained Silicon: materials, technology and characterisation.
2. Ferroelectric materials for nanoelectronics.
3. Nanoelectronics for future biomedical applications.
4. Interconnects for integrated circuits.
5. Interface engineering and heterogenious integration

Undergraduate Teaching

Semiconductor Electronic Devices EEE3020

Postgraduate Teaching

Semiconductor Electronic Devices EEE8018

• Mojarad SA, Kwa KSK, Goss JP, Zhou Z, Ponon NK, Appleby DJR, Al Hamadany RAS, O'Neill A. A comprehensive study on the leakage current mechanisms of Pt/SrTiO₃/Pt capacitor. Journal of Applied Physics 2012, 111(1), 014503.
• Fjer M, Persson S, Escobedo-Cousin E, O'Neill AG. Low Frequency Noise in Strained Si Heterojunction Bipolar Transistors. IEEE Transactions on Electron Devices 2011, 58(12), 4196-4203.
• Sohal H, Jackson A, Jackson R, Vasilevskiy K, Clowry GJ, O'Neill A, Baker SN. A novel flexible sinusoidal electrode to enhance longevity of chronic neuronal recordings. In: 40th Annual Meeting of the Society for Neuroscience. 2010, San Diego, California, USA: Society for Neuroscience.
• Wilson CJ, Croes K, Tokei Z, Beyer GP, Gallacher BJ, Bull SJ, Horsfall AB, O'Neill AG. Analysis and characterization of a mechanical sensor to monitor stress in interconnect features. Thin Solid Films 2010,519 1 443-449.
• Agaiby RMB, Olsen SH, Eneman G, Simoen E, Augendre E, O'Neill AG. Direct measurement of MOSFET channel strain by means of backside etching and Raman spectroscopy on long-channel devices. IEEE Electron Device Letters 2010, 31(5), 419-421.
• Alatise OM, Olsen SH, O'Neill AG, Majhi P. Improved self-gain in deep submicrometer strained silicon-germanium pMOSFETs with HfSiOx/TiSiN gate stacks. Microelectronic Engineering 2010, 87(11), 2196-2199.
• Wilson CJ, Volders H, Croes K, Pantouvaki M, Beyer GP, Horsfall AB, O'Neill AG, Tokei Z. In situ X-ray diffraction study of self-forming barriers from a Cu-Mn alloy in 100 nm Cu/Iow-k damascene interconnects using synchrotron radiation. In: Microelectronic Engineering: 18th European Workshop on Materials for Advanced Metallization.2010,Grenoble, France:Elsevier BV
• Wilson C, Volders H, Croes K, Pantouvaki M, Beyer G, Horsfall A, O'Neill A, Tokei Z. In situ X-ray diffraction study of self-forming barriers from a Cu-Mn alloy in 100 nm Cu/low-k damascene interconnects using synchrotron radiation. Microelectronic Engineering 2010, 87(3), 398-401.
• Halak B, Yakovlev A, O'Niell A. Is a single cell sensor possible?. In: Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC). 2010, Buenos Aires, Argentina: IEEE.
• Alatise OM, Olsen SH, O'Neill AG. Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics. Solid State Electronics 2010, 54(6), 628-634.
• Persson S, Fjer M, Escobedo-Cousin E, Olsen SH, Malm G, Wang YB, Hellstrom PE, Ostling M, O'Neill AG. Strained-Silicon Heterojunction Bipolar Transistor. IEEE Transactions on Electron Devices 2010, 57(6), 1243-1252.
• Alatise OM, Kwa KSK, Olsen SH, O'Neill AG. The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs. Solid-State Electronics 2010, 54(3), 327-335.
• Childs P, Ong S, Herbert D, O'Neill A. X-ray propagation in multiwall carbon nanotubes. International Journal of Modern Physics A 2010, 25(1), 208-216.
• Yan L, Simoen E, Olsen SH, Akheyar A, Claeys C, O'Neill AG. 1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack. Solid-State Electronics 2009, 53(11), 1177-1182.
• Alatise O, Kwa K, Olsen S, O'Neill A. A design methodology for maximizing the voltage gain of strained Si MOSFETs using the thickness of the silicon-germanium strain relaxed buffer as a design parameter. In: International Semiconductor Device Research Symposium (ISDRS). 2009, College Park, Maryland, USA.
• Wilson CJ, Croes K, Van Cauwenberghe M, Tokei Z, Beyer GP, Horsfall AB, O'Neill AG. A NEMS-based sensor to monitor stress in deep sub-micron Cu/Low-k interconnects. Semiconductor Science and Technology 2009, 24(11), 115018.
• Wilson CJ, Croes K, Tokei Z, Vereecke B, Beyer GP, O'Neill AG, Horsfall AB. Application of a Nano-Mechanical Sensor to Monitor Stress in Copper Damascene Interconnects. Applied Physics Express 2009, 2(9), 096503.
• Escobedo-Cousin E, Olsen SH, O'Neill AG, Coulson H. Defect identification in strained Si/SiGe heterolayers for device applications. Journal of Physics D: Applied Physics 2009, 42(17), 6.
• Wilson CJ, Croes K, Tokei Z, Beyer GP, Horsfall AB, O'Neill AG. Demonstration of a Sub-micron Damascene Cu/Low-k Mechanical Sensor to Monitor Stress in BEOL Metallization. In: IEEE International Conference on Microelectronic Test Structures (ICMTS 2009). 2009, Oxnard, CA, USA: IEEE.
• Alatise OM, Kwa KSK, Olsen SH, O'Neill AG. Improved Analog Performance in Strained-Si MOSFETs Using the Thickness of the Silicon-Germanium Strain-Relaxed Buffer as a Design Parameter. IEEE Transactions on Electron Devices 2009, 56(12), 3041-3048.
• De Michielis L, Moselund K, Bouvet D, Dobrosz P, Olsen S, O'Neill A, Lattanzio L, Najmzadeh M, Selmi L, Ionescu A. Optimization of the channel lateral strain profile for improved performance of multi-gate MOSFETs. In: International Symposium on VLSI Technology, Systems, and Applications, Proceedings. 2009, Hsinchu, Taiwan: IEEE.
• Alatise OM, Olsen SH, Cowern NEB, O'Neill AG, Majhi P. Performance Enhancements in Scaled Strained-SiGe pMOSFETs With HfSiOx/TiSiN Gate Stacks. IEEE Transactions on Electron Devices 2009, 56(10), 2277-2284.
• Nikitina I, Vassilevski K, Horsfall A, Wright N, O'Neill AG, Ray SK, Zekentes K, Johnson CM. Phase composition and electrical characteristics of nickel silicide Schottky contacts formed on 4H-SiC. Semiconductor Science and Technology 2009,24 5 055006.
• Vassilevski K, Nikitina I, Horsfall A, Wright N, O'Neill AG, Gwilliam R, Johnson CM. Silicon Carbide Static Induction Transistor with Implanted Buried Gate. In: 7th European Conference on Silicon Carbide and Related Materials (ECSCRM 2008).2009,Barcelona, Spain:Materials Science Forum: Trans Tech Publications Ltd.
• Olsen SH, Yan L, Agaiby R, Escobedo-Cousin E, O'Neill AG, Hellström PE, Ostling M, Lyutovich K, Kasper E, Claeys C, Parker EHC. Strained Si/SiGe MOS technology: Improving gate dielectric integrity. Microelectronic Engineering 2009, 86(3), 218-223.
• Wilson CJ, Zhao C, Zhao L, Metzger TH, Tokei Z, Croes K, Pantouvaki M, Beyer GP, Horsfall AB, O'Neill AG. Study of the effect of dielectric porosity on the stress in advanced Cu/low-k interconnects using x-ray diffraction. Applied Physics Letters 2009, 94(18), 181914.
• Wilson C, Zhaoa C, Zhaoc L, Tökei Z, Croesa K, Pantouvakia M, Beyera G, Horsfall AB, O'Neill A. Synchrotron measurement of the effect of dielectric porosity and air gaps on the stress in advanced Cu/low-k interconnects. In: Proceedings of the IEEE International Interconnect Technology Conference (IITC). 2009, Sapporo, Hokkaido, Japan: IEEE.
• Wilson CJ, Croes K, Zhao C, Metzger TH, Zhao L, Beyer GP, Horsfall AB, O'Neill AG, Tokei Z. Synchrotron measurement of the effect of linewidth scaling on stress in advanced Cu/Low-k interconnects. Journal of Applied Physics 2009, 106(5), 053524.
• Gallacher B, O'Neill A, Bull S, Wilson C, Horsfall A. Analysis of a passive sensor for predicting process-induced stress in advanced integrated circuit interconnect. IEEE Transactions on Device and Materials Reliability 2008, 8(1), 174-181.
• Fiegna C, Yang Y, Sangiorgi E, O'Neill AG. Analysis of self-heating effects in ultrathin-body SOI MOSFETs by device simulation. IEEE Transactions on Electron Devices 2008, 55(1), 233-244.
• Ong SY, Childs PA, Herbert DC, O'Neill AG. Bragg scattering of x-rays in multiwalled carbon nanotubes. Journal of Applied Physics 2008, 104(8), 083103.
• Persson S, Fjer M, Escobedo-Cousin E, Malm G, Wang YB, Hellstrom PE, Ostling M, Parker EHC, Nash LJ, Majhi P, Olsen SH, O'Neill AG. Fabrication and characterisation of strained Si heterojunction bipolar transistors on virtual substrates. In: IEEE International Electron Devices Meeting (IEDM).2008,San Francisco, CA:IEEE
• Alatise OM, Kwa KSK, Olsen SH, O'Neill AG. Improved Analog Performance of Strained Si n-MOSFETs on Thin SiGe Strained Relaxed Buffers. In: ESSDERC 2008: Proceedings of the 38th European Solid State Device Research Conference.2008,Edinburgh, UK:IEEE
• Yan L, Olsen SH, Escobedo-Cousin E, O'Neill AG. Improved gate oxide integrity of strained Si n-channel metal oxide silicon field effect transistors using thin virtual substrates. Journal of Applied Physics 2008, 103(9), 094508.
• Wang K, Wilson CJ, Cuthbertson A, Herberholz R, Coulson HP, O'Neill AG, Horsfall AB. Influence of barriers on the reliability of dual damascene copper contacts. In: IEEE International Reliability Physics Symposium Proceedings. 2008, Phoenix, AZ: IEEE.
• Agaiby R, O'Neill AG, Olsen SH, Eneman G, Verheyen P, Loo R, Claeys C. Insight into the aggravated lifetime reliability in advanced MOSFETs with strained-Si channels on SiGe strain-relaxed buffers due to self-heating. IEEE Transactions on Electron Devices 2008, 55(6), 1568-1573.
• Najmzadeh M, Moselund K, Ionescu A, Dobrosz P, Olsen S, O'Neill AG. Investigation of Strain Profile Optimization in gate-all-around suspended silicon nanowire FET. In: 38th European Solid State Device Research Conference (ESSDERC 2008). 2008, Edinburgh, UK.
• Agaiby RMB, Olsen SH, Dobrosz P, Coulson H, Bull SJ, O'Neill AG. Nanometer Scale Strain Profiling Through Si-SiGe Heterolayers. In: 50th Electronic Materials Conference (EMC 2008). 2008, Santa Barbara, USA: The Minerals, Metals & Materials Society (TMS).
• Agaiby RMB, Olsen SH, Dobrosz P, Coulson H, Bull SJ, O'Neill AG. Nanometer strain profiling through Si/SiGe quantum layers. Journal of Applied Physics 2008, 104(1), 013507.
• Olsen SH, Dobrosz P, Agaiby RMB, Tsang YL, Alatise O, Bull SJ, O'Neill AG, Moselund KE, Ionescu AM, Majhi P, Buca D, Mantl S, Coulson H. Nanoscale strain characterisation for ultimate CMOS and beyond. In: E-MRS 2008 Spring Meeting. 2008, Strasbourg: Materials Science in Semiconductor Processing: Pergamon.
• Olsen S, Dobrosz P, Agaiby R, Tsang Y, Alatise O, Bull S, O'Neill A, Moselund K, Ionescu A, Majhi P, Buca D, Mantl S, Coulson H. Nanoscale strain characterisation for ultimate CMOS and beyond. Materials Science in Semiconductor Processing 2008,11 5 271-278.
• Dobrosz P, Olsen SH, Bull SJ, Tsang YL, Agaiby RMB, O'Neill AG, Buca D, Mantl S, Ghyselen B. Nanoscale strain characterisation in patterned SSOI structures. In: E-MRS 2008 Spring Conference. 2008, Strasbourg, France.
• Nikitina I, Vassilevski K, Horsfall A, Wright N, O'Neill AG, Ray SK, Johnson CM. Phase Inhomogeneity and Electrical Characteristics of Nickel Silicide Schottky Contacts Formed on 4H-SiC. In: 7th European Conference on Silicon Carbide and Related Materials (ECSCRM 2008). 2008, Barcelona, Spain: Materials Science Forum: Trans Tech Publications Ltd.
• O'Neill AG, Tsang YL, Gallacher BJ, Olsen SH. Piezomobility description of strain-induced mobility. In: 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT).2008,Beijing, China:IEEE
• O'Neill AG, Agaiby R, Olsen S, Yang Y, Hellstrom P-E, Ostling M, Oehme M, Lyutovich K, Kasper E, Eneman G, Verheyen P, Loo R, Claeys C, Fiegna C, Sangiorgi E. Reduced self-heating by strained silicon substrate engineering. Applied Surface Science 2008, 254(19), 6182-6185.
• Olsen SH, Tarawneh ZAl, Varzgar J, Escobedo-Cousin E, Agaiby RMB, Dobrosz P, O'Neill AG, Hellström P-E, Östling M, Parker E, Loo R, Claeys C. Strain engineering for high mobility channels. In: 7th International Semiconductor Technology Conference. 2008, Shanghai, China: The Electrochemical Society.
• Houlton A, Horrocks BR, Wright NG, Olsen S, O'Neill A. Top down and Bottom-up Routes to Nanoscale Electronic Components. In: Intel European Research and Innovation Conference. 2008, Leixlip, Ireland: Intel Europe.
• Tsang YL, O'Neill AG, Gallacher BJ, Olsen SH. Using piezoresistance model with C-R conversion for modeling of strain-induced mobility. IEEE Electron Device Letters 2008, 29(9), 1062-1064.
• De Michielis M, Esseni D, Tsang YL, Palestri P, Selmi L, O'Neill AG, Chattopadhyay S. A semianalytical description of the hole band structure in inversion layers for the physically based modeling of pMOS transistors. IEEE Transactions on Electron Devices 2007, 54(9), 2164-2173.
• Wang K, Cuthbertson A, Horsfall AB, Yeoh JC, Herberholz R, O'Neill AG, Colledge S, Coulson HP, Watson D, Braithwaite G. Application of CVD-W Diffusion Barrier Layers to Dual Damascene Copper Contacts. In: VLSI Multilevel Interconnection Conference. 2007, Fremont, California.
• Moselund KE, Dobrosz P, Olsen S, Pott V, De Michielis L, Tsamados D, Bouvet D, O'Neill A, Ionescu AM. Bended gate-all-around nanowire MOSFET: A device with enhanced carrier mobility due to oxidation-induced tensile stress. In: International Electron Devices Meeting (IEDM). 2007, Washington, DC: IEEE.
• Wang K, Horsfall A, Cuthbertson A, Bull S, O'Neill A. Comparative study of novel barrier layers in ULSI copper interconnects. Microelectronic Engineering 2007, 84(11), 2486-2490.
• Wilson CJ, Horsfall AB, O'Neill AG, Wright NG, Bull SJ, Terry JG, Stevenson JTM, Walton AJ. Direct measurement of electromigration-induced stress in interconnect structures. IEEE Transactions on Device and Materials Reliability 2007, 7(2), 356-362.
• O'Neill AG, Olsen SH, Tsang YL, Dobrosz P. Evolution of strain engineering for Si technology. In: INFOS. 2007, Athens, Greece.
• Vassilevski K, Nikitina I, Horsfall A, Wright NG, O'Neill AG, Hilton KP, Munday AG, Hydes AJ, Uren MJ, Johnson CM. High voltage silicon carbide schottky diodes with single zone junction termination extension. In: 6th European Conference on Silicon Carbide and Related Materials (ECSCRM 2006). 2007, Newcastle upon Tyne, UK: Materials Science Forum: Trans Tech Publications Ltd.
• Tsang YL, Chattopadhyay S, Uppal S, Escobedo-Cousin E, Ramakrishnan HK, Olsen SH, O'Neill AG. Modeling of the threshold voltage in strained Si/Si1-x Gex/S1-yGey(x ≥ y) CMOS architectures. IEEE Transactions on Electron Devices 2007, 54(11), 3040-3048.
• Agaiby R, Yang Y, Olsen SH, O'Neill AG, Eneman G, Verheyen P, Loo R, Claeys C. Quantifying self-heating effects in strained Si MOSFETs with scaling. Solid-State Electronics 2007, 51(11-12), 1473-1478.
• Agaiby R, Yang Y, Olsen SH, O'Neill AG, Eneman G, Verheyen P, Loo R, Claeys C. Quantifying self-heating effects with scaling in globally strained Si MOSFETs. Solid-State Electronics 2007, 51(11-12), 1473-1478.
• O'Neill AG, Olsen SH, Yang Y, Agaiby R, Hellstrom P-E, Ostling M, Lyutovich K, Kasper E, Eneman G, Verheyen P, Loo R, Claeys C, Fiegna C, Sangiorgi E. Reduced self-heating by strained Si substrate engineering. In: International Symposium on Control of Semiconductor Interfaces (ISCSI-V). 2007, Tokyo, Japan.
• O'Neill AG, Olsen SH, Yang Y, Agaiby R, Hellstrom P-E, Ostling M, Lyutovich K, Kasper E, Eneman G, Verheyen P, Loo R, Claeys C, Fiegna C, Sangiorgi E. Reduced self-heating by strained Si substrate engineering. In: 3rd International Workshop on New Group IV Semiconductor Nanoelectronics. 2007, Sendai, Japan.
• O'Neill A, Olsen S, Yang Y, Agaiby R, Hellstrom PE, Ostling M, Oehme M, Lyutovich K, Kasper E, Eneman G, Verheyen P, Loo R, Claeys C, Fiegna C, Sangiorgi E. Reduced Self-Heating by Strained Silicon Substrate Engineering. In: Proceedings ISCSI-V. 2007, Tokyo, Japan.
• Olsen SH, Yan L, Agaiby R, Escobedo-Cousin E, O'Neill AG. Strained Si/SiGe MOS technology: improving gate dielectric integrity. In: International Symposium on Advanced Gate Stack Technology (ISAGST). 2007, Dallas, USA.
• Olsen SH, Yana L, Agaiby R, Escobedo-Cousin E, O'Neill AG, Hellstrom PE, Ostling M, Lyutovich K, Kasper E, Claeys C, Parker EHC. Strained Si/SiGe MOS technology: Improving gate dielectric integrity. In: 4th IEEE International Symposium on Advanced Gate Stack Technology (ISAGST 2007). 2007, Dallas, Texas: Microelectronic Engineering: Elsevier.
• Escobedo-Cousin E, Olsen SH, O'Neill AG, Alatise OM, Agaiby RMB, Dobrosz P, Braithwaite G, Cuthbertson A, Grasby T, Parker EHC. Strained Si/strained SiGe/relaxed SiGe structures: identifying roughness due to compressed SiGe and its impact on high mobility MOSFETs. In: Materials REsearch Society Conference (MRS).2007,San Francisco, USA
• Escobedo-Cousin E, Olsen SH, Dobrosz P, Bull SJ, O'Neill AG, Coulson H, Claeys C, Loo R, Delhougne R, Caymax M. Thermal stability of supercritical thickness-strained Si layers on thin strain-relaxed buffers. Journal of Applied Physics 2007, 102(12), -.
• Childs PA, Ong SY, Herbert DC, Milne WI, Teo KBK, Shang NG, Gangloff A L, Smith D, O'Neill AG. X-ray propagation in carbon nanotubes. In: International conference on charged and neutral particles channeling phenomena II : "Channeling 2006". 2007, Rome, Italy: SPIE.
• O'Neill AG, Olsen SH, Yang Y, Agaiby R, Hellstron PE, Ostling M, Oehme M, Lyutovich K, Kasper E, Eneman G, Verheyen P, Loo R, Claeys C, Fiegna C, Sangiorgi E. [invited] Engineering Self-Heating by Strained Silicon Technology. In: Sendai Workshop. 2007, Japan.
• Yan L, Olsen S, Kanoun M, Al-Araimi M, Agaiby R, Dalapati G, O'Neill A. Analysis of gate leakage characteristics in strained Si MOSFETs. In: 210th ECS Meeting. 2006, Cancun, Mexico: The Electrochemical Society.
• Yan L, Olsen SH, Kanoun M, Al-Araimi M, Agaiby R, Dalapati GK, O'Neill AG. Analysis of gate leakage in strained Si MOSFETs. In: 210th Electrochemical Society Meeting. 2006, Cancun, Mexico: ECS Transactions, Electrochemical Society, Inc..
• Yan L, Olsen SH, Kanoun M, AlAraimi M, Agaiby R, Dalapati GK, ONeill AG. Analysis of Gate Leakage in Strained Si MOSFETs. In: SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting. 2006, Cancun, Mexico: The Electrochemical Society.
• Tsang YL, Chattopadhyay S, Kwa KSK, Dalapati GK, Agaiby R, O'Neill AG, Olsen SH. Analytical model for threshold voltage of p-MOSFET in strained-Si/SiGe dual channel architecture. In: International Conference on Electronic and Photonic Materials, Devices and Systems (EPMDS-2006). 2006, Calcutta, India.
• Bhatnagar P, Horsfall AB, Wright NG, Johnson CM, Vassilevski KV, O'Neill AG. Analytical modelling of I-V characteristics for 4H-SiC enhancement mode VJFET. In: International Conference on Silicon Carbide and Related Materials (ICSCRM 2005). 2006, Pittsburgh, PA: Materials Science Forum: Trans Tech Publications Ltd.
• Philip M, O'Neill A. Calibration of 4H-SiC TCAD models and material parameters. In: Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD. 2006, Perth, Western Australia: IEEE.
• Chattopadhyay S, Varzgar JB, Seger J, Tsang YL, Kwa KSK, Olsen SH, O'Neill AG. Capacitance-voltage (C-V) technique for the characterisation of stained Si/Si1-xGex hetero-structure MOS devices. In: EMPDS (Electronic and Photonic Materials, Devices and Systems). 2006, India.
• Chattopadhyay S, Varzgar JB, Seger J, Tsang YL, Kwa KSK, Olsen SH, O'Neill AG. Capacitance-voltage (C-V) technique for the characterisation of strained Si/Si1-xGex hetero-structure MOS devices. In: International Conference on Electronic and Photonic Material, Devices and Systems (EPMDS 2006).2006,Calcutta, India
• Olsen SH, Escobedo-Cousin E, Varzgar JB, Agaiby R, Seger J, Dobrosz P, Chattopadhyay S, Bull SJ, O'Neill AG, Hellstrom P-E, Edholm J, Ostling M, Lyutovich KL, Oehme M, Kasper E. Control of self-heating in thin virtual substrate strained Si MOSFETs. IEEE Transactions on Electron Devices 2006, 53(9), 2296-2305.
• Vassilevski KV, Nikitina IP, Wright NG, Horsfall AB, O'Neill AG, Johnson CM. Device processing and characterisation of high temperature silicon carbide Schottky diodes. In: 3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials. 2006, Singapore: Microelectronic Engineering, Elsevier BV.
• O'Neill AG, Olsen SH, Escobedo-Cousin E, Agaiby R, Bull SJ, Coulson H, Claeys C, Loo R, Delougne R, Caymax M, Verheyen P, Eneman G. Device related characterisation techniques for Si/SiGe heterostructures. In: International Conference on NANO-Structures Self-Assembling (NANOSea).2006,Aix-en-Provence, France
• O'Neill AG. Device-related characterisation techniques for Si/SiGe heterosructures. In: NanoSea: International Conference on Nanostructures SElf-Assembly.2006,Aix-en-Provence, France
• Wilson CJ, Horsfall AB, O'Neill AG, Wright NG, Wang K, Bull SJ, Terry JG, Stevenson JTM, Walton AJ. Direct measurement of electromigration induced stress in interconnect structures. In: IEEE International Reliability Physics Symposium Proceedings. 2006, San Jose, CA: IEEE.
• O'Neill AG, Olsen SH, Tsang YL, Dobrosz P. Evolution of strain engineering for Si technology. In: Insulating Films on Semiconductors (INFOS). 2006, Athens, Greece.
• Dalapati GK, Chattopadhyay S, Driscoll LS, O'Neill AG, Kwa KSK, Olsen SH. Extraction and modelling of strained-Si MOSFET parameters using small signal channel conductance method. Journal of Applied Physics 2006, 99(3), 024501.
• Dalapati GK, Chattopadhyay S, Driscoll LS, O'Neill AG, Kwa KSK, Olsen SH. Extraction of strained-Si metal-oxide-semiconductor field-effect transistor parameters using small signal channel conductance method. Journal of Applied Physics 2006, 99(3), 034501.
• Yan L, Olsen SH, Kanoun M, Agaiby R, O'Neill AG. Gate leakage mechanisms in strained Si devices. Journal of Applied Physics 2006, 100(10), 104507.
• Varzgar JB, Kanoun M, Uppal S, Chattopadhyay S, Chandra P, Olsen SH, O'Neill AG, Hellstron P-E, Edholm J, Ostling M, Lyutovich K, Oehme M, Kasper E. Gate Oxide Reliability of Strained Si NMOS Devices Employing a Thin SiFe Strain Relaxed Buffer. In: Materials Science and Engineering B: Advanced Functional Solid-state Materials. E-MRS Conference.2006,Nice, France:Elsevier SA
• Varzgar JB, Chattopadhyay S, Uppal S, Chandra P, Olsen SH, O'Neill AG. Gate oxide reliability of strained Si NMOS devices employing a thin SiGe strain-relaxed buffer. In: European Materials Research Society Conference (E-MRS).2006,Nice, France
• Uppal S, Varzgar J, Chattopadhyay S, Olsen SH, O'Neill AG. Gate oxide reliability of strained Si/SiGe MOS: effect of Ge content variation. In: Proceedings of the European Materials Research Society Conference (E-MRS).2006,Nice, France
• Uppal S, Varzgar JB, Kanoun M, Chattopadhyay S, Olsen SH, O'Neill AG. Gate Oxide Reliability on strained Si/SiGe MOS: Effect of Ge content variation. In: Materials Science and Engineering B: Advanced Functional Solid-state Materials. E-MRS Conference.2006,Nice, France:Elsevier SA
• Uppal S, Kanoun M, Chattopadhyay S, Agaiby R, Olsen SH, Bull SJ, O'Neill A. Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices. In: Materials Research Society Symposium Proceedings: MRS Spring Meeting. 2006, San Francisco, California, USA: Materials Research Society.
• Uppal S, Kanoun M, Chattopadhyay S, Agaiby R, Olsen SH, Bull SJ, O'Neill AG. Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices. In: Doping Engineering for Device Fabrication. 2006, San Francisco, USA: Materials Research Society.
• Vassilevski K, Nikitina I, Bhatnagar P, Horsfall A, Wright N, O'Neill AG, Uren M, Hilton K, Munday A, Hydes A, Johnson CM. High temperature operation of silicon carbide Schottky diodes with recoverable avalanche breakdown. In: Materials Science Forum. 2006, Pittsburgh, Pennsylvania, USA: Trans Tech Publications Ltd..
• Uppal S, Kanoun M, Varzgar JB, Chattopadhyay S, Olsen SH, O'Neill AG. Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices. Material Science and Engineering B 2006, 135(3), 207-209.
• Uppal S, Kanoun M, Varzgar JB, Chattopadhyay S, Olsen S, O'Neill A. Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 2006, 135(3), 207-209.
• Dalapati GK, Kwa KSK, Olsen SH, Chattopadhyay S, O'Neill AG, Tsang YL, Agaiby R. Impact of strained Si thickness and Ge our diffusion on strained-Si/SiO2 interface quality for surface channel strained Si n-MOSFET devices. In: International Conference on Electronic and Photonic Materials, Devices and Systems (EPMDS). 2006, India.
• Dalapati GK, Chattopadhyay S, Kwa KSK, Olsen SH, Tsang YL, Agaiby R, O'Neill AG, Dobrosz P, Bull SJ. Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs. IEEE Transactions on Electron Devices 2006, 53(5), 1142-1152.
• Jankovic ND, Pesic TV, O'Neill A. Modelling of strained-Si/SiGe NMOS transistors including DC self-heating. Solid-State Electronics 2006, 50(3), 496-499.
• Agaiby R, O'Neill AG, Olsen SH, Eneman G, Verheyen P, Loo R, Claeys C. Quantifying Self-Heating Effects in Strained Si MOSFETs with Scaling. In: Proceeding of the 36th European Solid-State Device Research Conference (ESSDERC).2006,Montreux, France:IEEE
• Agaiby R, O'Neill AG, Olsen SH, Eneman G, Verheyen P, Loo R, Claeys C. Quantifying self-heating effects in strained Si MOSFETs with scaling. In: European Solid State Device Research Conference (ESSDERC).2006,Montreux, Switzerland
• Saha AR, Dimitriu CB, Horsfall AB, Chattopadhyay S, Wright NG, O'Neill AG, Bose C, Maiti CK. Quantum-mechanical modeling of current-voltage characteristics of Ti-silicided Schottky diodes. Journal of Applied Physics 2006, 99(11), 113707.
• Varzgar JB, Kanoun M, Uppal S, Chattopadhyay S, Tsang YL, Escobedo-Cousin E, Olsen SH, O'Neill AG, Hellstrom PE, Edholm J, Ostling M, Lyutovich K, Oehme M, Kasper E. Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures. Material Science and Engineering B 2006, 135(3), 203-206.
• Varzgar JB, Kanoun M, Uppal S, Chattopadhyay S, Tsang YL, Escobedo-Cousins E, Olsen SH, O'Neill A, Hellstrom P-E, Edholm J, Ostling M, Lyutovich K, Oehme M, Kasper E. Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 2006, 135(3), 203-206.
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• Nikitina IP, Vassilevski KV, Horsfall AB, Wright NG, O'Neill AG, Johnson CM, Yamamoto T, Malhan RK. Structural pattern formation in titanium-nickel contacts on silicon carbide following high-temperature annealing. Semiconductor Science and Technology 2006, 21(7), 898-905.
• Escobedo-Cousin E, Olsen SH, Bull SJ, O'Neill AG, Coulson H, Claeys C, Loo R, Delhougne R, Caymax M. Structuralstability of strained Si layers on thin strain-relaxed buffers for high performance MOSFETs. In: 3rd International Silicon-Germanium Device and Technology Meeting (ISTDM 2006). 2006, Princeton, New Jersey, USA.
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• Dalapati GK, Kwa KSK, Olsen SH, Chattopadhyay S, O'Neill AG, Driscoll LS, Tsang YL, Agaiby R, Escobedo-Cousin E. Thermal oxidation of strained-Si: impact of strained-Si thickness and Ge on Si/SiO2 interface. In: International Conference on Electronic and Photonic Material, Devices and Systems (EPMDS).2006,Calcutta, India
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• Bull SJ, Dobrosz P, Olsen SH, O'Neill AG. Assessment of strained silicon/SiGe with different architectures by Raman spectroscopy. In: Proceedings of Electronic Materials Conference.2005,Santa Barbara, USA
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• Agaiby R, O'Neill AG, Olsen SH. Design considerations for strained Si/SiGe deep submicron dual-channel CMOS using high thermal budgets. In: Engineering and Physical Sciences Research Council Annual Conference.2005,Lancaster, UK
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• Bhatnagar P, Horsfall AB, Wright NG, O'Neill AG, Vassilevski KV, Johnson CM. Effective edge termination design in SiCVJFET. In: Silicon Carbide and Related Materials: 5th European Conference on Silicon Carbide and Related Materials. 2005, Bologna, Italy: Trans Tech Publications Ltd.
• Nikitina IP, Vassilevski KV, Wright NG, Horsfall AB, O'Neill AG, Johnson CM. Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n -type silicon carbide. Journal of Applied Physics 2005, 97(8), 1-7.
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• Olsen SH, Dobrosz P, Escobedo-Cousin E, Bull SJ, O'Neill AG. Mobility-limiting mechanisms in single and dual channel strained Si/SiGe MOSFETs. In: EMRS 2005, Symposium D: Materials Science and Device Issues for Future Technologies. 2005, Strasbourg, France: Materials Science and Engineering B: Solid-State Materials for Advanced Technology: Elsevier.
• Dhar RS, Dalapati GK, Chattopadhyay S, Kwa KSK, Olsen SH, O'Neill AG. Modelling of self-heating in strained Si n-channel MOSFETs on SiGe virtual substrates. In: Proceedings of the Materials Research Society Conference (MRS).2005,Boston, Massachusetts, USA
• Soare S, Bull SJ, Oila A, O'Neill AG, Wright NG, Horsfall A, Dos Santos JMM. Obtaining mechanical parameters for metallisation stress sensor design using nanoindentation. Zeitschrift für Metallkunde 2005,96 11 1262-1266.
• Bull SJ, Dobrosz P, Olsen SH, O'Neill AG. On the relationship between electrical performance and Raman spectroscopic results for strained Si/SiGe devices. In: International Conference on Silicon Epitaxy and Heterostructures (ICSI4).2005,Awaji Island, Japan
• Bhatnagar P, Horsfall AB, Wright NG, Johnson CM, Vassilevski KV, O'Neill AG. Optimisation of a 4H-SiC enhancement mode power JFET for high temperature operation. Solid-State Electronics 2005, 49(3), 453-458.
• Chen CC, Horsfall AB, Wright NG, O'Neill AG. Optimisation of Heterostructure Bipolar Transistors in SiC. Materials Science Forum 2005, 483-485, 913-916.
• Chen CC, Horsfall AB, Wright NG, O'Neill AG. Optimisation of heterostructure bipolar transistors in SiC. In: Silicon Carbide and Related Materials: 5th European Conference on Silicon Carbide and Related Materials. 2005, Bologna, Italy: Trans Tech Publications Ltd.
• Saha AR, Dimitriu CB, Horsfall AB, Chattopadhyay S, Wright NG, O'Neill AG, Maiti CK. Prediction of barrier inhomogeneities and carrier transport in Ni-silicided Schottky diode. In: 3rd International Conference on Materials for Advanced Technologies (ICMAT 2005). 2005, Singapore: Applied Surface Science: Elsevier.
• Vassilevski KV, Wright NG, Nikitina IP, Horsfall AB, O'Neill AG, Uren MJ, Hilton KP, Masterton AG, Hydes AJ, Johnson CM. Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing. Semiconductor Science and Technology 2005, 20(3), 271-278.
• Norris DJ, Cullis AG, Olsen SH, O'Neill AG. Quantitative analysis of gate-oxide interface roughening in SiGe/Si virtual substrate-based transistor device structures. Thin Solid Films 2005, 474(1-2), 154-158.
• Blasciuc-Dimitriu C, Horsfall AB, Wright NG, Johnson CM, Vassilevski KV, O'Neill AG. Quantum modelling of I-V characteristics for 4H-SiC Schottky barrier diodes. Semiconductor Science and Technology 2005, 20(1), 10-15.
• Dos Santos JMM, Pina JCP, Batista AC, Horsfall AB, Wang K, Wright NG, Soare SM, Bull SJ, O'Neill AG, Terry JG, Walton AJ, Gundlach AM, Stevenson JTM. Sensitivity of a rotating beam sensor for stress evaluation in aluminium thin films. In: Materials Science Forum. 2005, Xi'an, China: Trans Tech Publications Ltd..
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• Hellstrom P-E, Edholm J, Ostling M, Olsen S, O'Neill A, Lyutovich K, Oehme M, Kasper E. Strained-Si NMOSFETs on thin 200 nm virtual substrates. In: International Semiconductor Device Research Symposium.2005,Washinton DC, USA:IEEE
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• Terry JG, Smith S, Walton AJ, Gundlach AM, Stevenson JTM, Horsfall AB, Wang K, Dos Santos JMM, Soare SM, Wright NG, O'Neill AG, Bull SJ. Test chip for the development and evaluation of sensors for measuring stress in metal interconnects. IEEE Transactions on Semiconductor Manufacturing 2005, 18(2), 255-260.
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• Horsfall AB, Wang K, Dos-Santos JMM, Soare SM, Bull SJ, Wright NG, O'Neill AG, Terry JG, Walton AJ, Gundlach AM, Stevenson JTM. Dependence of process parameters on stress generation in aluminum thin films. IEEE Transactions on Device and Materials Reliability 2004,4 3 482-486.
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• B-Dimitriu C, Horsfall AB, Wright NG, Johnson CM, Vassilevski KV, O'Neill AG. First principles derivation of carrier transport across metal - SiC barriers. In: Materials Science Forum: 10th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2004, Lyon, France: Trans Tech Publications Ltd.
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• Lafford TA, Olsen SH, Tanner BK, O'Neill AG. Measurement of Relaxation in Strained Silicon by Grazing Incidence In-plane X-ray Diffraction. 2004, Prague, Czech.
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• Soare S, Bull SJ, O'Neill AG, Wright N, Horsfall AB, dos Santos JMM. Nanoindentation assessment of aluminium metallisation; the effect of creep and pile-up. Surface and Coatings Technology 2004, 177-178, 497-503.
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• Gaspari V, Fobelets K, Ding PW, Velazquez-Perez JW, Olsen SH, O'Neill AG, Zhang J. Temperature dependence of submicrometer strained-Si surface channel n-type MOSFETs in DT mode. IEEE Electron Device Letters 2004. , 25(5), 334-336.
• Gaspari V, Fobelets K, Olsen SH, Velazquez-Perez JE, O'Neill AG, Zhang J. Temperature sensitivity of DC operation of sub-micron strained-Si MOSFETs. In: Proceedings of the Electronics Materials Conference. 2004, Notre Dame, Maryland, USA.
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• Horsfall AB, dos Santos JMM, Soare SM, Wright NG, O'Neill AG, Bull SJ, Walton AJ, Gundlach AM, Stevenson JTM. A novel sensor for the direct measurement of process induced residual stress in interconnects. In: 33rd European Solid-State Device Research. 2003, Estoril, Portugal: IEEE.
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• Chattopadhyay S, Kwa KSK, Olsen SH, Driscoll LS, ONeill AG. Capacitance - Voltage Characterization of Strained Si/SiGe Multiple Heterojunction Capacitors as a Tool for Heterojunction Metal Oxide Semiconductor Field Effect Transistor Channel Design. Semiconductor Science and Technology 2003, 18(8), 738-744.
• Blasciuc-Dimitriu C, Horsfall AB, Vasilevskiy KV, Johnson CM, Wright NG, O'Neill AG. Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes. Materials Science Forum 2003, 433-436, 823-826.
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• L.S. Driscoll, A.G. O’Neill, S.H. Olsen, S. Chattopadhyay and K.S.K. Kwa. Dual quantum well strained silicon/silicon-germanium n-channel heterojunction metal oxide semiconductor field effect transistors for CMOS logic. In: Proc. PREP. 2003, Exeter, UK.
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• Norris DJ, Cullis AG, Olsen SH, O'Neill AG, Zhang J. Measurements of gate-oxide interface roughness in strained-Si virtual substrate SiGe/Si MOSFET device structures. In: Microscopy of Semiconducting Materials: Conference on Microscopy of Semiconducting Materials. 2003, Cambridge, UK: Institute of Physics Publishing.
• Olsen SH, O'Neill AG, Chattopadhay S, Driscoll LS, Kwa KSK, Paul DJ, Zhang J. N-MOSFET performance in single and dual channel strained Si/SiGe CMOS architectures. In: 2003 International Semiconductor Device Research Symposium (IEEE Cat. No.03EX741). IEEE. 2003.2003,Washington, DC:IEEE
• Horsfall AB, Johnson CM, Wright NG, O'Neill AG. Optimisation of a 4H-SiC enhancement mode power JFET. In: Materials Science Forum: 4th European Conference on Silicon Carbide and Related Materials. 2003, Linkoping, Switzerland: Trans Tech Publications Ltd.
• Horsfall AB, Johnson CM, Wright NG, O'Neill AG. Optimisation of a 4H-SiC Enhancement Mode Power JFET. In: 4th European Conference on Silicon Carbide and Related Materials (ECSCRM 2002).2003,Linkoping, Sweden:Trans Tech Publications
• Kwa KSK, Chattopadhyay S, Olsen SH, Driscoll LS, O'Neill AG. Optimisation of channel thickness in strained Si/SiGe MOSFETs. In: 33rd European Solid-State Device Research. 2003, Estoril, Portugal: IEEE.
• Kwa K, Chattopadhyay S, Olsen S, Driscoll L, O'Neill AG. Optimisation of Channel Thickness in Strained Si/SiGe MOSFETs. In: Proc ESSDERC. 2003, Lisbon, Portugal.
• Kwa KSK, Chattopadhyay S, Olsen SH, Driscoll LS, O'Neill AG. Optimisation of channel thickness in strained Si/SiGe MOSFETs. In: 33rd European Solid-State Device Research Conference (ESSDERC). 2003, Estoril, Portugal: IEEE.
• Jankovic ND, O'Neill AG. Performance evaluation of SiGe HBTs on virtual substrates. In: Third International Conference on SiGe(C) Epitaxy and Heterostructures (ICSI3).2003,Santa Fe, NM, USA
• O'Neill AG, Childs PA. Propagation of x-rays in carbon nanotubes. In: 4th International Symposium on Nanostructures and Mesoscopic Systems (NanoMES 2003).2003,Tempe, Arizona, USA:Physica E: Low-Dimensional Systems and Nanostructures, Elsevier
• Childs PA, O'Neill A. Propagation of x-rays in carbon nanotubes. Physica E 2003, 19(1-2), 153-156.
• Childs PA, O'Neill AG. Propagation of X-rays in carbon nanotubes. In: Physica E: Low-Dimensional Systems and Nanostructures, Fourth International Symposium on Nanostructures and Mesoscopic Systems. 2003, Tempe, Arizona, USA: Elsevier BV.
• dos Santos JMM, Horsfall AB, Soare SM, Oila A, Bull SJ, Wright NG, O'Neill AG, Walton AJ, Gundlach AM, Stevenson JTM. Residual Stress Sensor for the Microelectronics Industry. In: Eurosensors XVII: the 17th European Conference on Solid-State Transducers.2003,Guimaraes, Portugal:Elsevier
• Temple MP, Paul DJ, Tang YT, Waite AM, Evans AGR, O'Neill AG, Zhang J, Grasby T, Parker EHC. The relative performance enhancement of strained-Si and buried channel p-MOS as a function of lithographic and effective gate lengths. In: 2003 International Semiconductor Device Research Symposium.2003,Washington, DC:IEEE
• Vassilevski KV, Horsfall AB, Johnson CM, Wright NG, O'Neill AG. 4H-SiC rectifiers with dual metal planar Schottky contacts. IEEE Transactions on Electron Devices 2002, 49(5), 947-949.
• Vassilevski KV, Horsfall AB, Johnson CM, Wright NG, O'Neill AG. 4H-SiC Schottky diodes with high on/off current ratio. Materials Science Forum 2002, 389-393(2), 1145-1148.
• Vassilevski KV, Horsfall AB, Johnson CM, Wright NG, O'Neill AG. 4H-SiC Schottky diodes with high on/off current ratio. In: International Conference on Silicon Carbide and Related Materials. 2002, Tsukuba, Japan: Trans Tech Publications Ltd.
• Soare SM, Bull SJ, Horefall A, Dos Santos J, O'Neill AG, Wright NG. Assessment of aluminium metallisation by nanoindentation. In: Materials Research Society Symposium: Surface Engineering Sythesis, Characterization and Applications. 2002, Boston, Massachusetts, USA: Materials Research Society.
• Blasciuc-Dimitriu C, Horsfall AB, Vassilevski KV, Johnson CM, Wright NG, O'Neill AG. Characterisation of the high temperature performance of 4H-SiC Schottky barrier diodes. In: Silicon Carbide and Related Materials: 4th Euopean Conference on Silicon Carbide and Related Materials (ECSCRM). 2002, Linkoping, Sweden: Trans Tech Publications Ltd.
• Badcock SG, O'Neill AG, Chester EG. Device and Circuit Performance of SiGe/Si MOSFETs. Solid-State Electronics 2002, 46(11), 1925-1932.
• Badcock SG, O'Neill AG, Chester EG. Device and circuit performance of SiGe/Si MOSFETs. Solid-State Electronics 2002, 46(11), 1925-1932.
• Olsen SH, O'Neill AG, Bull SJ, Woods NJ, Zhang J. Effect of metal-oxide-semiconductor processing on the surface rouhness of strained Si/SiGe material. Journal of Applied Physics 2002,92 3 1298-.
• Phelps GJ, Wright NG, Chester EG, Johnson CM, O'Neill AG, Ortolland S, Horsfall AB, Vassilevski K, Gwilliam RM. Enhanced dopant diffusion effects in 4H silicon carbide. In: International Conference on Silicon Carbide and Related Materials. 2002, Tsukuba, Japan: Trans Tech Publications Ltd.
• Phelps GJ, Wright NG, Johnson CM, O'Neill AG, Ortolland SA. Enhanced nitrogen diffusion in 4H-SiC. Applied Physics Letters 2002, 80(2), 228-230.
• Phelps GJ, Wright NG, Chester EG, Johnson CM, O'Neill AG, Ortolland S, Horsfall A, Vassilevski K, Gwilliam RM, Coleman PG, Burrows CP. Enhanced nitrogen diffusion in 4H-SiC. Applied Physics Letters 2002, 80(2), 228-230.
• Norris DJ, Cullis AG, Olsen SH, O'Neill AG. Measurement of the nanoscale roughness of advanced MOSFET layer structures. In: Fall MRS. 2002, Boston, Massachusetts, USA.
• Norris DJ, Cullis AG, Olsen SH, O'Neill AG. Measurement of the nanoscale roughness of advanced MOSFET layer structures. In: Materials Research Society Conference (MRS). 2002, Boston, Massachusetts, USA.
• Horsfall AB, Johnson CM, Wright NG, O'Neill AG. Optimisation of a 4H-SiC enhancement mode power JFET. In: Silicon Carbide and Related Materials: 4th Euopean Conference on Silicon Carbide and Related Materials (ECSCRM). 2002, Linkoping, Sweden: Trans Tech Publications Ltd.
• Horsfall AB, Vassilevski KV, Johnson CM, Wright NG, O'Neill AG, Gwilliam RM. Optimisation of implanted guard-ring terminations in 4H-SiC Schottky diodes. In: International Conference on Silicon Carbide and Related Materials.2002,Tsukuba, Japan:Materials Science Forum, Trans Tech Publications
• Horsfall AB, Vassilevski KV, Johnson CM, Wright NG, O'Neill AG, Gwilliam RM. Optimisation of implanted guard-ring terminations in 4H-SiC Schottky diodes. In: International Conference on Silicon Carbide and Related Materials. 2002, Tsukuba, Japan: Trans Tech Publications Ltd.
• Phelps GJ, Wright NG, Chester EG, Johnson CM, O'Neill AG. Step bunching fabrication constraints in silicon carbide. Semiconductor Science and Technology 2002, 17(5), L17-L21.
• Olsen SH, O'Neill AG, Norris DJ, Cullis AG, Woods NJ, Zhang J, Fobelets K, Kemhadjian HA. Strained Si/SiGe n-channel MOSFETs: Impact of cross-hatching on device performance. Semiconductor Science and Technology 2002, 17(7), 655-661.
• Vassilevski KV, Horsfall AB, Johnson CM, Wright NG, O'Neill AG. 4H-SiC Schottky diodes with high on-off current ratio. In: International Conference on Silicon Carbide and Related Materials. 2001.
• Kwa KS, ONeill AG. Diffusion of Boron in Stained Si-SiGe. In: PREP Conference. 2001, Keele.
• Wright NG, Johnson CM, ONeill AG, Horsfall A, Ortolland S, Adachi K, Phelps GJ, Knights AP, Coleman PG, Burrows CP. Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology. In: Silicon Carbide - Materials, Processing and Devices. Symposium (Materials Research Society Symposium Proceedings. 2001, Boston USA: Materials Research Society.
• Johnson CM, Wright NG, Uren MJ, Hilton KP, Rahimo M, Hinchley DA, Knights AP, Morrison DJ, Horsfall AB, Ortolland S, O'Neill AG. Recent progress and current issues in SiC semiconductor devices for power applications. IEE Proceedings: Circuits, Devices and Systems 2001, 148(2), 101-108.
• Michelakis K, Despotopoulos S, Badcock SG, Papavassiliou C, O'Neill AG, Toumazou C. SiGe HMOSFET differential pair. In: IEEE International Symposium on Circuits and Systems. 2001, Sydney, NSW, Australia: IEEE.
• Olsen SH, O'Neill AG. Analysis of strained Si/SiGe MOSFETs. In: Proc. PREP. 2000, Nottingham, UK.
• Morrison DJ, Wright NG, Horsfall AB, Johnson CM, O'Neill AG, Knights AP, Hilton KP, Uren MJ. Effect of post-implantation anneal on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation. Solid-State Electronics 2000, 44(11), 1879-1885.
• Hossin M, Johnson CM, Wright NG, O'Neill AG. Evaluation of GaAs Schottky gate bipolar transistor (SGBT) by electrothermal simulation. Solid-State Electronics 2000, 44(1), 85-94.
• Wright NG, Johnson CM, ONeill AG, Horsfall AB, Ortoll S, Adachi K, Knights AP, Coleman PG. Implanted bipolar technology in 4H-SiC. Materials Research Society Symposium Proceedings 2000, 622, T1.7.1-T1.7.6.
• Wright NG, Johnson CM, ONeill AG, Horsfall A, Ortolland S, Adachi K, Knights AP, Coleman PG. Implanted bipolar technology in 4H-SiC. In: Wide-Bandgap Electronic Devices. Symposium (Materials Research Society Symposium Proceedings). 2000, Strasbourg: Materials Research Society.
• Wright NG, Johnson CM, O'Neill AG, Horsfall A, Ortolland S, Adachi K, Knights AP, Coleman PG. Implanted bipolar technology in 4H-SiC. In: Wide-Bandgap Electronic Devices. Symposium. 2000, San Francisco, CA, USA.
• Phelps GJ, Wright NG, Chester EG, ONeill AG, Johnson CM, Silicon Carbide, Prep2000. Iso-planar Structures and Circuits. In: Prep 2000. 2000, Newcastle UK: IOP Publishing UK.
• Knights AP, Lourenco MA, Homewood KP, Morrison DJ, Wright NG, Ortolland S, Johnson CM, O'Neill AG, Coleman PG, Hilton KP, Uren MJ. Low temperature annealing of 4H-SiC Schottky diode edge terminations 4 formed by 30 keV Ar+ implantation. Journal of Applied Physics 2000, 87(8), 3973-3977.
• Badcock S, O'Neill A. Material requirements and design considerations for Si/SiGe heterojunction CMOS. Superlattices and Microstructures 2000, 28(5-6), 363-368.
• Coleman AP, Wright NG, Johnson CM, O'Neill AG, Horsfall A, Ortolland S, Adachi K, Phelps GJ, Knights PG, Burrows CP. Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology. In: Silicon Carbide - Materials, Processing and Devices: Symposium. 2000, Boston, MA, USA: Materials Research Society.
• Wright NG, Johnson CM, O'Neill AG, Horsfall A, Ortolland S, Adachi K, Phelps GJ, Knights AP, Coleman PG, Burrows CP. Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology. In: Materials Research Society Symposium - Proceedings 2000. 2000, Boston USA: Cambridge University Press.
• Morrison DJ, Pidduck AJ, Moore V, Wilding PJ, Hilton KP, Uren MJ, Johnson CM, Wright NG, O'Neill AG. Surface preparation for Schottky metal - 4H-SiC contacts formed on plasma-etched SiC. Semiconductor Science and Technology 2000, 15(12), 1107-1114.
• Adachi K, Johnson CM, Ortolland S, Wright NG, O'Neill AG. TCAD evaluation of double implanted 4H-SiC power bipolar transistors. Materials Science Forum 2000, 338-342, 1419-1422.
• O'Neill AG, Routley P, Gurry PK, Kemhadjian H. SiGe virtual substrate N-channel heterojunction MOSFETs. Semiconductor Science and Technology, 14, No 9, 784-789 1999.
• Morrison DJ, Hilton KP, Uren MJ, Wright NG, Johnson CM, O'Neill AG. Anomalous forward I-V characteristics of Ti/Au SiC Schottky barrier diodes. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 1999, 61-62(0), 345-348.
• Wright NG, Johnson CM, O'Neill AG. Cell geometry optimisation of 4H-SiC power UMOSFETs by electrothermal simulation. Solid-State Electronics 1999, 43(3), 515-520.
• Wright NG, Johnson CM, O'Neill AG. Cell geometry optimisation of 4H-SiC UMOSFETs by electrothernal simulation. Solid-State Electronics 1999, 43(3), 515-520.
• Adachi K, Johnson CM, Ortolland S, Wright NG, O'Neill AG. TCAD evaluation of double implanted 4H-SiC power bipolar transistors. Materials Science Forum: Silicon Carbide and Related Materials 1999 1999, 338-342, 1419-1422.
• Wright NG, Johnson CM, O'Neill AG. Sulphur based surface passivation for high voltage GaAS Schottky diodes. Solid-State Electronics 1998, 42(3), 437-440.
• O'Neill AG, Antoniadis DA. Investigation of Si/SiGe-based FET geometries for high frequency performance by computer simulation. IEEE Transactions on Electron Devices, 44, No 1, 80-88 1997.
• O'Neill AG, Ghiti A. The effects of grain boundary diffusion anisotropy on via electromigration failure. Journal of Applied Physics, 81, No 7, 3064-3068 1997.
• Low KS, Bull SJ, O'Neill AG. Simple computer modeling of the grain microstructure of Al-4wt%Cu interconnection lines. In: Polycrystalline Thin Films - Structure, Texture, Properties and Applications III.1997,San Francisco, CA:Materials Research Society
• O'Neill AG, Antoniadis DA. Deep submicron CMOS based on silicon germanium technology. IEEE Transactions on Electron Devices, 43, No 6, 911-918 1996.