Dr Konstantin Vassilevski joined the University of Newcastle as an Research Associate working on the SCEPTRE silicon carbide project in February 2001. He is a member of the Microelectronics Technology Research Group.
Dr Konstantin Vasilevskiy (Vassilevski) joined the School in February 2001 after conducting research into physics and technology of semiconductors for a total of 17 years. His work has encompassed a variety of devices from silicon IMPATT and p-i-n diodes through to GaN LEDs and has been concerned mainly with wide band gap semiconductor device design and processing. Konstantin’s main strengths lie in device processing, where he displays a rigorous experimental technique backed up by many years of hands-on experience in main clean room procedures. In the past years Konstantin has undertaken research into a range of SiC and GaN based devices and related process technologies, including:
- demonstration of pulsed SiC IMPATT diodes producing microwave power of 300 mW at frequency of 10 GHz;
- development of low resistivity TiC/Ni2Si ohmic contacts to 4H-SiC epitaxial layers having p-type conductivity;
- development of SiC Zener diodes with breakdown voltage of about 300 V;
- estimation of the electron saturated drift velocity in 4H-SiC along the c-axis;
- design and fabrication of light emitting diodes based on GaN p-n structures grown by hydride vapour phase epitaxy (HVPE);
- fabrication and characterisation of heterojunction diodes based on GaN/6H-SiC n-p structures grown by HVPE;
- development of Ni and Ni/Ti based ohmic contacts to p and n doped GaN epitaxial layers;
- measurement of lattice constants of GaN bulk quasi-crystals grown by HVPE and free of residual strains;
- development of upside down mesa-structure technology for fabricating SiC microwave test diodes.
K. Vassilevski has 69 publications in refereed journals and conference proceedings and 12 patents granted in the field. He has made presentations at several international conferences.
Konstantin Vassilevski is main responsible for the operation, maintenance and development of all SiC specific process tools and processes within the EECE clean room.
Ph.D. in Physics of Semiconductors from A. F. Ioffe Physico-Technical Institute, Russian Academy of Science, 2002. Thesis: Silicon carbide IMPATT diode.
M.Sc. in Solid State Physics from Moscow Engineering Physics Institute, 1981. Thesis: High power pulsed photo-dissociation laser.
1996-2002: A. F. Ioffe Institute, St. Petersburg, Russia, Research Associate: design and development of wide band gap semiconductor devices;
1993-1996: Cree Research EED, St. Petersburg, Russia, Vice Director: primary responsible for III- nitride device processing and characterisation;
1988-1992: A. F. Ioffe Institute, St. Petersburg, Russia, Postgraduate Student: numerical simulation and design of SiC IMPATT diode;
1984-1988: Scientific-Research Institute "Orion", Kiev, USSR, Engineer: responsible for the development of Si IMPATT and p-i-n diodes operating in mm-wave frequency region;
1982-1984: Scientific-Research Technological Institute, Ryazan, USSR; Engineer: responsible for material characterisation by Auger spectroscopy;
1981-1982: All-Union Scientific-Research Institute of Experimental Physics (VNIIEF), USSR, Engineer: design and fabrication of high power pulsed photo-dissociation laser.
Russian, Ukrainian, English
Mentor: Prof. A.G.O'Neill
Working under EPSRC funded project (Grant GR/S20420/01
"ASCENT - Advancing Silicon Carbide Electronics Technology"), Konstantin Vassilevski is currently involved in the design and fabrication of high temperature / high power silicon carbide devices, mainly focusing on device processing. He is responsible for development of 4 kV rated silicon carbide Schottky diodes.
Member of the local organizing committee for the 6th European Conference on Silicon Carbide and Related Materials (ECSCRM 2006).
Invited paper "Silicon carbide diodes for microwave applications" in a special issue of International Journal of High Speed Electronics and Systems, 2005 (also re-published as a hard cover book entitled “SiC Materials and Devices”).
Invited oral presentation at International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan: 4H-SiC IMPATT Diode Fabrication and Testing.
Member of the organizing committee of the First European GaN Workshop held in the Swiss Alp village of Rigi-Kaltbad on June 2-4, 1996 (EGW-1).
1. Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide,
Rajesh Kumar Malhan, Yuichi Takeuchi, Irina Nikitina, Konstantin Vassilevski, Nicholas Wright, Alton Horsfall, US Patent No 7,141,498, November 28, (2006).
2. III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer,
A. Nikolaev, Y. Melnik, V. Dmitriev, K. Vassilevski, US Patent No 6,849,862, February 1, (2005).
3. Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide,
K. Zekentes, K. Vassilevski, US Patent No 6,599,644, July 29, (2003).
4. Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques,
A. Nikolaev, Y. Melnik, V. Dmitriev, K. Vassilevski, US Patent No. 6,599,133, July 29, (2003).
5. P-n heterojunction-based structures utilizing HVPE grown III-V compound layers,
A. Nikolaev, Y. Melnik, V. Dmitriev, K. Vassilevski, US Patent No. 6,559,467, May 6, (2003).
6. Method for growing p-n heterojunction-based structures utilizing HVPE techniques,
A. Nikolaev, Y. Melnik, V. Dmitriev, K. Vassilevski, US Patent No. 6,559,038, May 6, (2003).
7. Method for growing p-type III-V compound material utilizing HVPE techniques,
A. Nikolaev, Y. Melnik, V. Dmitriev, K. Vassilevski, US Patent No. 6,555,452, April 29, (2003).
8. Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide,
K. Zekentes, K. Vassilevski, Canadian Patent No CA2322595, April 6, (2002).
9. III-V compound semiconductor device with an AlxByInzGa1-x-y-zN non-continues quantum dot layer,
A. Nikolaev, Y. Melnik, V. Dmitriev, K. Vassilevski, US Patent No. 6,479,839, November 12, (2002).
10. P-n homojunction-based structures utilizing HVPE grown III-V compound layers,
A. Nikolaev, Y. Melnik, V. Dmitriev, K. Vassilevski, US Patent No. 6,476,420, November 5, (2002).
11. Method for growing p-n homojunction-based structures utilizing HVPE techniques,
A. Nikolaev, Y. Melnik, V. Dmitriev, K. Vassilevski, US Patent No 6,472,300, October 29, (2002).
12. Process for producing III-V nitride pn junctions and p-i-n junctions,
A. Nikolaev, Y. Melnik, K. Vassilevski, V. Dmitriev, US patent No. 6,218,269, April 17, (2001).