Newcastle University

Introduction

Prof. Wright is currently serving as the Pro-Vice Chancellor for Research and Innovation. By background, Prof Wright is an electrical engineer who has a distinguished track record of research into the application of novel materials in electronics and related technolgies.

Background

Professor Nick Wright joined University of Newcastle in 1994. He previously completed both his undergraduate and PhD qualifications at Edinburgh University where he worked on the characterisation of a wide range of semiconducting materials using x-ray techniques. At Newcastle, Prof. Wright has worked on a number of projects in the area of semiconductor devices and technology. In recent years, Prof. Wright has concentrated on SiC technology and has led the Ascent Program – a large multi-partner program funded jointly by EPSRC and Industry. Since 2003, Prof Wright has been the leader of the SiC Platform Grant at Newcastle which has concentrated on establishing both novel technologies for SiC and new international collaborations. In 2003, Prof. Wright became an EPSRC Advanced Research Fellow with a program of research into SiC devices and related technologies. Over this period, Prof. Wright has given a number of invited presentations around the world and is a member of the International Steering Committee for the European Conference on Silicon Carbide and Related Materials.

Professor Wright is also the Pro-Vice Chancellor for Research and Innovation

Roles and Responsibilities

Pro-Vice Chancellor for Research and Innovation

• Vassilevski K, Nikitina I, Horsfall A, Wright N, Johnson C. 6 kV, 10.5 mOhm·cm2 nickel silicide Schottky diodes on commercial 4H-SiC epitaxial wafers. In: Materials Science Forum: Silicon Carbide and Related Materials. 2010, Nürnberg, Germany: Trans Tech Publications Ltd.
• Brennan D, Miao B, Vasilevskiy K, Wright N, Horsfall A. Amplitude shift keyed radio communications for hostile environments. In: Materials Science Forum: Silicon Carbide and Related Materials. 2010, Nürnberg, Germany: Trans Tech Publications Ltd.
• Goss J, Briddon P, Wright N, Horsfall A. Density functional simulations of physisorbed and chemisorbed single graphene layers on 4H-SiC (0001), (0001̄) and 4H-SiC:H surface. In: Materials Science Forum: Silicon Carbide and Related Materials 2009. 2010, Nürnberg, Germany: Trans Tech Publications Ltd.
• Yazdi G, Vassilevski K, Córdoba J, Gogova D, Nikitina I, Syväjärvi M, Odén M, Wright N, Yakimova R. Free standing AlN single crystal grown on pre-patterned and in situ patterned 4H-SiC substrates. In: Materials Science Forum: Silicon Carbide and Related Materials 2009. 2010, Nürnberg, Germany: Trans Tech Publications Ltd.
• Vassilevski K, Nikitina I, Horsfall A, Wright N, Johnson C. Growth of few layers graphene on silicon carbide from nickel silicide supersaturated with carbon. In: Materials Science Forum: Silicon Carbide and Related Materials 2009. 2010, Nürnberg, Germany: Trans Tech Publications Ltd.
• Barker S, Miao B, Brennan D, Vassilevski K, Wright N, Horsfall A. Silicon carbide based energy harvesting module for hostile environments. In: Materials Science Forum: Silicon Carbide and Related Materials 2009. 2010, Nürnberg, Germany: Trans Tech Publications Ltd.
• Barker S, Vassilevski KV, Wright NG, Horsfall AB. High Temperature Vibration Energy Harvester System. In: IEEE Sensors. 2010, Waikoloa, Hawaii, USA: IEEE.
• Watson SMD, Wright NG, Horrocks BR, Houlton A. Preparation, Characterization and Scanned Conductance Microscopy Studies of DNA-Templated One-Dimensional Copper Nanostructures. Langmuir 2010, 26(3), 2068-2075.
• Hassanien R, Al-Hinai M, Al-Said SAF, Little R, Siller L, Wright NG, Houlton A, Horrocks BR. Preparation and Characterization of Conductive and Photoluminescent DNA-Templated Polyindole Nanowires. ACS Nano 2010, 4(4), 2149-2159.
• Yazdi GR, Vassilevski K, Córdoba JM, Gogova D, Nikitina IP, Syväjärvi M, Odén M, Wright NG, Yakimova R. Free standing AlN single crystal growth on pre-patterned and in situ patterned 4H-SiC substrates. In: 13th International Conference on Silicon Carbide and Related Materials (ICSCRM 2009). 2010, Nurnberg, Germany: Materials Science Forum: Trans Tech Publications Ltd.
• Vassilevski K, Nikitina IP, Horsfall AB, Wright NG, Johnson CM. 4.6 kV, 10.5 mOhm.cm(2) Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers. In: 13th International Conference on Silicon Carbide and Related Materials (ICSCRM 2009). 2010, Nurnberg, Germany: Materials Science Forum: Trans Tech Publications Ltd.
• Vassilevski K, Nikitina IP, Horsfall AB, Wright NG, Johnson CM. Growth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with Carbon. In: 13th International Conference on Silicon Carbide and Related Materials (ICSCRM 2009). 2010, Nurnberg, Germany: Materials Science Forum: Trans Tech Publications Ltd.
• Nikitina I, Vassilevski K, Horsfall A, Wright N, O'Neill AG, Ray SK, Zekentes K, Johnson CM. Phase composition and electrical characteristics of nickel silicide Schottky contacts formed on 4H-SiC. Semiconductor Science and Technology 2009, 24(5), 055006.
• Barker S, Miao B, Brennan D, Wright NG, Horsfall AB. High Temperature Storage for Energy Harvesting in Hostile Environments. In: IEEE Sensors. 2009, Christchurch, New Zealand: IEEE.
• Miao B, Mahapatra R, Jenkins R, Silvie J, Wright NG, Horsfall AB. Radiation Induced Change in Defect Density in HfO2-Based MIM Capacitors. IEEE Transactions on Nuclear Science 2009, 56(5), 2916-2924.
• Goss JP, Briddon PR, Wright NG, Horsfall AB. Density Functional Simulations of Physisorbed and Chemisorbed Single Graphene Layers on 4H-SiC (0001), (000(1)over-bar) and 4H-SiC:H surface. In: 13th International Conference on Silicon Carbide and Related Materials (ICSCRM 2009). 2010, Nurnberg, Germany: Materials Science Forum: Trans Tech Publications Ltd.
• Mahapatra R, Chakraborty AK, Poolamai N, Horsfall A, Chattopadhyay S, Wright NG, Coleman KS, Coleman PG, Burrows CP. Leakage current and charge trapping behavior in Ti O2 Si O2 high- κ gate dielectric stack on 4H-SiC substrate. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 2007, 25(1), 217-223.
• Mahapatra R, Chakraborty AK, Horsfall AB, Wright NG, Beamson G, Coleman KS. Energy-band alignment of HfO₂/SiO₂/SiC gate dielectric stack. Applied Physics Letters 2008, 92(4), 042904.
• Mahapatra R, Chakraborty AK, Horsfall AB, Chattopadhyay S, Wright NG, Coleman KS. Effects of interface engineering for HfO2 gate dielectric stack on 4H-SiC. Journal of Applied Physics 2007, 102(2), 024105.
• Weng M-H, Mahapatra R, Horsfall AB, Wright NG. Trap-assisted gas sensing mechanism in Pd/TiO2/SiO 2/SiC capacitors at high temperatures. IEEE Sensors Journal 2007, 7(10), 1395-1399.
• Wilson CJ, Horsfall AB, O'Neill AG, Wright NG, Bull SJ, Terry JG, Stevenson JTM, Walton AJ. Direct measurement of electromigration-induced stress in interconnect structures. IEEE Transactions on Device and Materials Reliability 2007, 7(2), 356-362.
• Wright NG, Horsfall AB, Vassilevski K. Prospects for SiC electronics and sensors. Materials Today 2008, 11(1-2), 16-21.
• Weng MH, Mahapatra R, Wright NG, Horsfall AB. Role of oxygen in high temperature hydrogen sulfide detection using MISiC sensors. Measurement Science and Technology 2008, 19(2), 024002.
• Miao B, Mahapatra R, Wright N, Horsfall A. The role of carbon contamination in voltage linearity and leakage current in high-k metal-insulator-metal capacitors. Journal of Applied Physics 2008, 104(5), 054510.
• Pozzi M, Hassan M, Harris AJ, Burdess JS, Jiang L, Lee KK, Cheung R, Phelps GJ, Wright NG, Zorman CA, Mehregany M. Mechanical properties of a 3C-SiC film between room temperature and 600 °c. Journal of Physics D: Applied Physics 2007, 40(11), 3335-3342.
• Pruneanu S, Al-Said SAF, Dong L, Hollis TA, Galindo MA, Wright NG, Houlton A, Horrocks BR. Self-assembly of DNA-templated polypyrrole nanowires: Spontaneous formation of conductive nanoropes. Advanced Functional Materials 2008, 18(16), 2444-2454.
• Vassilevski K, Nikitina I, Horsfall A, Wright NG, O'Neill AG, Hilton KP, Munday AG, Hydes AJ, Uren MJ, Johnson CM. High voltage silicon carbide schottky diodes with single zone junction termination extension. In: 6th European Conference on Silicon Carbide and Related Materials (ECSCRM 2006). 2007, Newcastle upon Tyne, UK: Materials Science Forum: Trans Tech Publications Ltd.
• Dong L, Hollis T, Connolly BA, Wright NG, Horrocks BR, Houlton A. DNA-templated semiconductor nanoparticle chains and wires. Advanced Materials 2007, 19(13), 1748-1751.
• Wright NG, Horsfall AB. SiC sensors: A review. Journal of Physics D: Applied Physics 2007, 40(20), 6345-6354.
• Christensen PA, Egerton TA, Lin WF, Meynet P, Shao Z-G, Wright NG. A novel electrochemical device for the disinfection of fluids by OH radicals. Chemical Communications 2006, (38), 4022-4023.
• Bhatnagar P, Horsfall AB, Wright NG, Johnson CM, Vassilevski KV, O'Neill AG. Analytical modelling of I-V characteristics for 4H-SiC enhancement mode VJFET. In: International Conference on Silicon Carbide and Related Materials (ICSCRM 2005). 2006, Pittsburgh, PA: Materials Science Forum: Trans Tech Publications Ltd.
• Mahapatra R, Poolamai N, Chattopadhyay S, Wright NG, Chakraborty AK, Coleman KS, Coleman PG, Burrows CP. Characterization of thermally oxidized Ti/SiO₂ gate dielectric stacks on 4H-SiC substrate. Applied Physics Letters 2006, 88(7), 072910.
• Liqin D, Hollis T, Fishwick S, Connolly BA, Wright NG, Horrocks BR, Houlton A. Synthesis, manipulation and conductivity of supramolecular polymer nanowires. Chemistry - A European Journal 2007, 13(3), 822-828.
• Coleman PG, Burrows CP, Mahapatra R, Wright NG. Vacancy-type defects in TiO2/SiO2/SiC dielectric stacks. Journal of Applied Physics 2007, 102(1), 014106.
• Vassilevski KV, Nikitina IP, Wright NG, Horsfall AB, O'Neill AG, Johnson CM. Device processing and characterisation of high temperature silicon carbide Schottky diodes. In: 3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials. 2006, Singapore: Microelectronic Engineering, Elsevier BV.
• Vassilevski K, Nikitina I, Bhatnagar P, Horsfall A, Wright N, O'Neill AG, Uren M, Hilton K, Munday A, Hydes A, Johnson CM. High temperature operation of silicon carbide Schottky diodes with recoverable avalanche breakdown. In: Materials Science Forum. 2006, Pittsburgh, Pennsylvania, USA: Trans Tech Publications Ltd.
• Horsfall AB, Prentice CHA, Tappin P, Bhatnagar P, Wright NG, Vassilevski KV, Nikitina IP. Optimisation of 4H-SiC MOSFET structures for logic applications. In: Materials Science Forum. 2006, Pittsburgh, Pennsylvania, USA: Trans Tech Publications Ltd.
• Nikitina IP, Vassilevski KV, Horsfall AB, Wright NG, O'Neill AG, Johnson CM, Yamamoto T, Malhan RK. Structural pattern formation in titanium-nickel contacts on silicon carbide following high-temperature annealing. Semiconductor Science and Technology 2006, 21(7), 898-905.
• Vassilevski KV, Nikitina IP, Horsfall AB, Wright NG, Johnson CM, Malhan RK, Yamamoto T. Structural properties of titanium-nickel films on silicon carbide following high temperature annealing. In: Materials Science Forum. 2006, Pittsburgh, Pennsylvania, USA: Trans Tech Publications Ltd.
• Wright NG, Vassilevski KV, Nikitina I, Horsfall AB, Johnson CM, Bhatnagar P, Tappin P. Aluminium implantation induced linear surface faults in 4H-SiC. Materials Science Forum 2005, 483-485, 613-616.
• dos Santos JMM, Wang K, Horsfall AB, Pina JCP, Wright NG, O'Neill AG, Soare SM, Bull SJ, Terry JG, Walton AJ, Gundlach AM, Stevenson JTM. Calibration of MEMS-based test structures for predicting thermomechanical stress in integrated circuit interconnect structures. IEEE Transactions on Device and Materials Reliability 2005, 5(4), 713-719.
• Keegan N, Wright NG, Lakey JH. Circular dichroism spectroscopy of folding in a protein monolayer. Angewandte Chemie - International Edition 2005, 44(30), 4801-4804.
• Nikitina IP, Vassilevski KV, Wright NG, Horsfall AB, O'Neill AG, Johnson CM. Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n -type silicon carbide. Journal of Applied Physics 2005, 97(8), 1-7.
• Soare S, Bull SJ, Oila A, O'Neill AG, Wright NG, Horsfall A, Dos Santos JMM. Obtaining mechanical parameters for metallisation stress sensor design using nanoindentation. Zeitschrift für Metallkunde 2005, 96(11), 1262-1266.
• Steeds JW, Furkert SA, Sullivan W, Hayes JM, Wright NG. Optical centres with local vibrational modes created by high temperature annealing of electron irradiated 4H and 6H silicon carbide. In: Silicon Carbide and Related Materials: 5th European Conference on Silicon Carbide and Related Materials. 2005, Bologna, Italy: Trans Tech Publications Ltd.
• Bhatnagar P, Horsfall AB, Wright NG, Johnson CM, Vassilevski KV, O'Neill AG. Optimisation of a 4H-SiC enhancement mode power JFET for high temperature operation. Solid-State Electronics 2005, 49(3), 453-458.
• Saha AR, Dimitriu CB, Horsfall AB, Chattopadhyay S, Wright NG, O'Neill AG, Maiti CK. Prediction of barrier inhomogeneities and carrier transport in Ni-silicided Schottky diode. In: 3rd International Conference on Materials for Advanced Technologies (ICMAT 2005). 2005, Singapore: Applied Surface Science: Elsevier.
• Vassilevski KV, Wright NG, Nikitina IP, Horsfall AB, O'Neill AG, Uren MJ, Hilton KP, Masterton AG, Hydes AJ, Johnson CM. Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing. Semiconductor Science and Technology 2005, 20(3), 271-278.
• Blasciuc-Dimitriu C, Horsfall AB, Wright NG, Johnson CM, Vassilevski KV, O'Neill AG. Quantum modelling of I-V characteristics for 4H-SiC Schottky barrier diodes. Semiconductor Science and Technology 2005, 20(1), 10-15.
• Dos Santos JMM, Pina JCP, Batista AC, Horsfall AB, Wang K, Wright NG, Soare SM, Bull SJ, O'Neill AG, Terry JG, Walton AJ, Gundlach AM, Stevenson JTM. Sensitivity of a rotating beam sensor for stress evaluation in aluminium thin films. In: Materials Science Forum. 2005, Xi'an, China: Trans Tech Publications Ltd.
• Terry JG, Smith S, Walton AJ, Gundlach AM, Stevenson JTM, Horsfall AB, Wang K, Dos Santos JMM, Soare SM, Wright NG, O'Neill AG, Bull SJ. Test chip for the development and evaluation of sensors for measuring stress in metal interconnects. IEEE Transactions on Semiconductor Manufacturing 2005, 18(2), 255-260.
• Wright NG, Poolamai N, Vassilevski KV, Horsfall AB, Johnson CM. Benefits of high-k dielectrics in 4H-SiC trench MOSFETs. Materials Science Forum 2004, 457-460, 1433-1436.
• Wright NG, Poolamai N, Vassilevski K, Horsfall AB, Johnson CM. Benefits of high-k dielectrics in 4H-SIC trench MOSFETs. In: 10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003). 2004, Lyon, France: Materials Science Forum: Trans Tech Publications Ltd.
• Horsfall AB, Wang K, Dos-Santos JMM, Soare SM, Bull SJ, Wright NG, O'Neill AG, Terry JG, Walton AJ, Gundlach AM, Stevenson JTM. Dependence of process parameters on stress generation in aluminum thin films. IEEE Transactions on Device and Materials Reliability 2004, 4(3), 482-486.
• Soare S, Bull SJ, Oila A, O'Neill AG, Wright N, Horsfall A, dos Santos J. Determination of mechanical parameters for rotating MEMS structures as a function of deposition method. In: Thin Films: Stresses and Mechanical Properties X. 2004, Boston, Massachusetts, USA: Materials Research Society.
• Soare S, Bull SJ, Oila A, O'Neill A, Wright N, Horsfall A, dos Santos J. Determination of mechanical parameters for rotating MEMS structures as a function of deposition method. In: MRS Fall Meeting 2003. 2004, Boston, Massachusetts, USA.
• Vassilevski K, Horsfall AB, Johnson CM, Wright NG. Edge termination of SiC Schottky diodes with guard rings formed by high energy Boron implantation. In: 10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003). 2004, Lyon, France: Materials Science Forum: Trans Tech Publications Ltd.
• B-Dimitriu C, Horsfall AB, Wright NG, Johnson CM, Vassilevski KV, O'Neill AG. First principles derivation of carrier transport across metal - SiC barriers. In: Materials Science Forum: 10th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2004, Lyon, France: Trans Tech Publications Ltd.
• Vassilevski KV, Zekentes K, Horsfall AB, Johnson CM, Wright NG. Low voltage silicon carbide zener diode. In: Materials Science Forum: 10th International Conferece on Silicon Carbide and Related Materials (ICSCRM). 2004, Lyon, France: Trans Tech Publications Ltd.
• Soare S, Bull SJ, O'Neill AG, Wright N, Horsfall AB, dos Santos JMM. Nanoindentation assessment of aluminium metallisation; the effect of creep and pile-up. Surface and Coatings Technology 2004, 177-178, 497-503.
• Vassilevski K, Hedley J, Horsfall AB, Johnson CM, Wright NG. Reactive ion etching of Silicon Carbide with patterned Boron implantation. In: Madar, R., Camassel, J., Blanquet, E, ed. Materials Science Forum: Silicon Carbide and Related Materials 2003. Zurich-Uetikon: Trans Tech Publications Ltd, 2004, pp.925-928.
• Vassilevski KV, Hedley J, Horsfall AB, Johnson CM, Wright NG. Reactive ion etching of silicon carbide with patterned boron implantation. In: 10th International Conference on Silicon Carbide and Related Materials (ICSCRM 2003). 2004, Lyon, France: Materials Science Forum: Trans Tech Publications Ltd.
• Terry JG, Smith S, Walton AJ, Gundlach AM, Stevenson JTM, Horsfall AB, Wang K, Dos Santos JMM, Soare SM, Wright NG, O'Neill AG, Bull SJ. Test chip for the development and evaluation of test structures for measuring stress in metal interconnect. In: IEEE International Conference on Microelectronic Test Structures. 2004, Awaji Yumebutai International Conference Center, Japan: Institute of Electrical and Electronics Engineers.
• Horsfall AB, dos Santos JMM, Soare SM, Wright NG, O'Neill AG, Bull SJ, Walton AJ, Gundlach AM, Stevenson JTM. A novel sensor for the direct measurement of process induced residual stress in interconnects. In: 33rd European Solid-State Device Research. 2003, Estoril, Portugal: IEEE.
• Blasciuc-Dimitriu C, Horsfall AB, Vasilevskiy KV, Johnson CM, Wright NG, O'Neill AG. Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes. Materials Science Forum 2003, 433-436, 823-826.
• Horsfall AB, Dos Santos JMM, Soare SM, Wright NG, O'Neill AG, Bull SJ, Walton AJ, Gundlach AM, Stevenson JTM. Direct measurement of residual stress in sub-micron interconnects. Semiconductor Science and Technology 2003, 18(11), 992-996.
• Phelps GJ, Chester EG, Johnson CM, Wright NG. Field enhanced diffusion of nitrogen and boron in 4H-silicon carbide. Journal of Applied Physics 2003, 94(7), 4285-4290.
• Dos Santos JMM, Wang K, Soare SM, Horsfall AB, Bull SJ, Wright NG, Oila A, O'Neill AG, Terry JG, Walton AJ, Gundlacj AM, Stevenson JTM. Hinge optimisation in a micro-rotating structure for stress gauging in integrated circuit interconnects. In: Materials Research Society Symposium Proceedings. 2003, Boston, Massachusetts, USA.
• Horsfall AB, Johnson CM, Wright NG, O'Neill AG. Optimisation of a 4H-SiC Enhancement Mode Power JFET. In: 4th European Conference on Silicon Carbide and Related Materials (ECSCRM 2002). 2003, Linkoping, Sweden: Trans Tech Publications.
• dos Santos JMM, Horsfall AB, Soare SM, Oila A, Bull SJ, Wright NG, O'Neill AG, Walton AJ, Gundlach AM, Stevenson JTM. Residual Stress Sensor for the Microelectronics Industry. In: Eurosensors XVII: the 17th European Conference on Solid-State Transducers. 2003, Guimaraes, Portugal: Elsevier.
• Vassilevski KV, Horsfall AB, Johnson CM, Wright NG, O'Neill AG. 4H-SiC rectifiers with dual metal planar Schottky contacts. IEEE Transactions on Electron Devices 2002, 49(5), 947-949.
• Vassilevski KV, Horsfall AB, Johnson CM, Wright NG, O'Neill AG. 4H-SiC Schottky diodes with high on/off current ratio. Materials Science Forum 2002, 389-393(2), 1145-1148.
• Raynaud C, Isoird K, Lazar M, Johnson CM, Wright N. Barrier height determination of SiC Schottky diodes by capacitance and current-voltage measurements. Journal of Applied Physics 2002, 91(12), 9841-.
• Horsfall AB, Vassilevski KV, Johnson CM, Wright NG, O'Neill AG, Gwilliam RM. Optimisation of implanted guard-ring terminations in 4H-SiC Schottky diodes. In: International Conference on Silicon Carbide and Related Materials. 2002, Tsukuba, Japan: Materials Science Forum, Trans Tech Publications.
• Phelps GJ, Wright NG, Chester EG, Johnson CM, O'Neill AG. Step bunching fabrication constraints in silicon carbide. Semiconductor Science and Technology 2002, 17(5), L17-L21.
• Wright NG, Johnson CM, ONeill AG, Horsfall A, Ortolland S, Adachi K, Knights AP, Coleman PG. Implanted bipolar technology in 4H-SiC. In: Wide-Bandgap Electronic Devices. Symposium (Materials Research Society Symposium Proceedings). 2000, Strasbourg: Materials Research Society.
• Wright NG, Johnson CM, ONeill AG, Horsfall A, Ortolland S, Adachi K, Phelps GJ, Knights AP, Coleman PG, Burrows CP. Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology. In: Silicon Carbide - Materials, Processing and Devices. Symposium (Materials Research Society Symposium Proceedings. 2001, Boston USA: Materials Research Society.
• Johnson CM, Wright NG, Uren MJ, Hilton KP, Rahimo M, Hinchley DA, Knights AP, Morrison DJ, Horsfall AB, Ortolland S, O'Neill AG. Recent progress and current issues in SiC semiconductor devices for power applications. IEE Proceedings: Circuits, Devices and Systems 2001, 148(2), 101-108.
• Phelps GJ, Wright NG, Chester EG, ONeill AG, Johnson CM, Silicon Carbide, Prep2000. Iso-planar Structures and Circuits. In: Prep 2000. 2000, Newcastle UK: IOP Publishing UK.
• Knights AP, Lourenco MA, Homewood KP, Morrison DJ, Wright NG, Ortolland S, Johnson CM, O'Neill AG, Coleman PG, Hilton KP, Uren MJ. Low temperature annealing of 4H-SiC Schottky diode edge terminations 4 formed by 30 keV Ar+ implantation. Journal of Applied Physics 2000, 87(8), 3973-3977.
• Wright NG, Johnson CM, O'Neill AG. Cell geometry optimisation of 4H-SiC power UMOSFETs by electrothermal simulation. Solid-State Electronics 1999, 43(3), 515-520.
• Wright NG, Johnson CM, O'Neill AG. Sulphur based surface passivation for high voltage GaAS Schottky diodes. Solid-State Electronics 1998, 42(3), 437-440.
• Wright NG, Nelmes RJ, Belmonte SA, McMahon MI. Observation and modelling of preferred orientation in two-dimensional powder patterns. Journal of Synchrotron Radiation 1996, 3(3), 112-119.
• Tiwari AK, Goss JP, Briddon PR, Wright NG, Horsfall AB, Rayson MJ. Bromine functionalisation of diamond: An ab initio study. Physica Status Solidi A 2012, 209(9), 1703-1708.
• Furnival BJD, Roy SK, Vassilevski KV, Wright NG, Horsfall AB. CMOS compatible gas sensor arrays for hostile environments. In: Sensors. 2012, Taipei, Taiwan: IEEE.
• Martin LC, Clark D, Ramsay EP, Murphy AE, Thompson RF, Smith DA, Young RAR, Cormack JD, Wright NG, Horsfall AB. Comparison of Oxide Quality for Monolithically Fabricated SiC CMOS Structures. In: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2012, Cleveland, Ohio, USA: Trans Tech Publications Ltd.
• Tiwari AK, Goss JP, Briddon P, Wright NG, Horsfall AB. Density Functional Simulations of Transition Metal Terminated (001)-Diamond Surfaces. Materials Science Forum 2012, 717-720, 1311-1314.
• Tiwari AK, Goss JP, Briddon P, Wright NG, Horsfall AB. Density functional simulations of transition metal terminated (001)-diamond surfaces. In: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2012, Cleveland, Ohio, USA: Trans Tech Publications Ltd.
• Brennan D, Vasilevskiy K, Wright N, Horsfall A. Direct Frequency Modulation of a High Temperature Silicon Carbide Oscillator. In: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2012, Cleveland, Ohio, USA: Trans Tech Publications Ltd.
• Tiwari AK, Goss JP, Briddon PR, Wright NG, Horsfall AB, Rayson MJ. Effect of different surface coverages of transition metals on the electronic and structural properties of diamond. Physica Status Solidi A 2012, 209(9), 1697-1702.
• Tiwari AK, Goss JP, Briddon PR, Wright NG, Horsfall AB. Electronic and structural properties of diamond (001) surfaces terminated by selected transition metals. Physical Review B 2012, 86(15), 155301.
• Pinto H, Jones R, Palmer DW, Goss JP, Tiwari AK, Briddon PR, Wright NG, Horsfall AB, Rayson MJ, Oberg S. First-principles studies of the effect of (001) surface terminations on the electronic properties of the negatively charged nitrogen-vacancy defect in diamond. Physical Review B 2012, 86(4), 045313.
• Mahapatra R, Horsfall AB, Wright NG. Forming-Free Reversible Bipolar Resistive Switching Behavior in Al-Doped HfO2 Metal-Insulator-Metal Devices. Journal of Electronic Materials 2012, 41(4), 656-659.
• Furnival BJD, Wright NG, Horsfall AB. High Temperature Reliability of High-kappa/SiC MIS Hydrogen Sensors. In: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2012, Cleveland, Ohio, USA: Trans Tech Publications Ltd.
• Spargo CM, Furnival BJD, Mahapatra RM, Goss JP, Wright NG, Horsfall AB. Identification of Slow States at the SiO2/SiC Interface Through Sub-Bandgap Illumination. In: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2012, Cleveland, Ohio, USA: Trans Tech Publications Ltd.
• Escobedo-Cousin E, Vassilevski K, Nikitina I, Wright N, O'Neill A, Horsfall A, Goss J. Local Solid Phase Epitaxy of Few-Layer Graphene on Silicon Carbide. In: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2012, Cleveland, Ohio, USA: Trans Tech Publications Ltd.
• Chan HK, Stevens RC, Goss JP, Wright NG, Horsfall AB. Low Frequency Noise in 4H-SiC Lateral JFET Structures. In: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2012, Cleveland, Ohio, USA: Trans Tech Publications Ltd.
• Brennan DR, Mostaghimi O, Vassilevski KV, Wright NG, Horsfall AB. Novel SiC self starting DC-DC converter for high temperature wireless sensor nodes. In: Sensors. 2012, Taipei, Taiwan: IEEE.
• Hassanien R, Al-Said SAF, Siller L, Little R, Wright NG, Houlton A, Horrocks BR. Smooth and conductive DNA-templated Cu2O nanowires: growth morphology, spectroscopic and electrical characterization. Nanotechnology 2012, 23(7), 075601.
• Watson SMD, Hedley JH, Galindo MA, Al-Said SAF, Wright NG, Connolly BA, Horrocks BR, Houlton A. Synthesis, Characterisation and Electrical Properties of Supramolecular DNA-Templated Polymer Nanowires of 2,5-(Bis-2-thienyl)-pyrrole. Chemistry: A European Journal 2012, 18(38), 12008-12019.
• Nagareddy VK, Gaskill DK, Tedesco JL, Myers-Ward RL, Eddy CR, Goss JP, Wright NG, Horsfall AB. Temperature Dependent Chemical Sensitivity of Epitaxial Graphene. In: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2012, Cleveland, Ohio, USA: Trans Tech Publications Ltd.
• Barker S, Vassilevski KV, Nikitina IP, Wright NG, Horsfall AB. Thermal Stress Response of Silicon Carbide pin Diodes Used As Photovoltaic Devices. In: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2012, Cleveland, Ohio, USA: Trans Tech Publications Ltd.
• Tiwari AK, Goss JP, Briddon PR, Wright NG, Horsfall AB, Jones R, Pinto H, Rayson MJ. Thermodynamic stability and electronic properties of F- and Cl-terminated diamond. Physica Status Solidi A 2012, 209(9), 1709-1714.
• Vassilevski K, Nikitina I, Horsfall AB, Wright NG, Johnson CM. 3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring. In: Materials Science Forum: 8th European Conference on Silicon Carbide and Related Materials. 2011, Oslo, Norway: Trans Tech Publications Ltd.
• Tiwari AK, Goss JP, Briddon PR, Wright NG, Horsfall AB, Jones R, Pinto H, Rayson MJ. Calculated electron affinity and stability of halogen-terminated diamond. Physical Review B 2011, 84(24), 245305.
• Furnival BJD, Wright NG, Horsfall AB. Discriminating Gas Concentrations in Extreme Temperature Environments. In: IEEE Sensors. 2011, Limerick, Ireland: IEEE.
• Stevens RC, Vassilevski K, Lees JE, Wright NG, Horsfall AB. Effect of Proton Irradiation Induced Defects on 4H-SiC Schottky Diode X-ray Detectors. In: Materials Science Forum: 8th European Conference on Silicon Carbide and Related Materials. 2011, Oslo, Norway: Trans Tech Publications Ltd.
• Nagareddy VK, Nikitina IP, Gaskill DK, Tedesco JL, Myers-Ward RL, Eddy CR, Goss JP, Wright NG, Horsfall AB. High temperature measurements of metal contacts on epitaxial graphene. Applied Physics Letters 2011, 99(7), 073506.
• Goss JP, Briddon PR, Nagareddy VK, Wright NG, Horsfall AB, Caldwell JD, Gaskill DK, Jernigan GG. Influence of intercalated silicon on the transport properties of graphene. In: Materials Science Forum: 8th European Conference on Silicon Carbide and Related Materials. 2011, Oslo, Norway: Trans Tech Publications Ltd.
• Furnival BJD, Vassilevski K, Wright NG, Horsfall AB. Recovery of Ohmic Contacts Formed on C-face 4H-SiC Following High Temperature Post-Processing. In: Materials Science Forum: 8th European Conference on Silicon Carbide and Related Materials. 2011, Oslo, Norway: Trans Tech Publications Ltd.
• Yamamoto T, Malhan R, Takeuchi Y, Vassilevski K, Wright N. Semiconductor device having SiC substrate and method for manufacturing the same. UK: Denso Corporation, GB2427071B, 2011, 9 March.
• Vassilevski K, Nikitina I, Horsfall AB, Wright NG, Smith AJ, Johnson CM. Silicon Carbide Vertical JFET with Self-Aligned Nickel Silicide Contacts. In: Materials Science Forum: 8th European Conference on Silicon Carbide and Related Materials. 2011, Oslo, Norway: Trans Tech Publications Ltd.
• Weng MN, Barker S, Mahapatra R, Furnival BJD, Wright NG, Horsfall AB. Study of the Interface Properties of TiO2/SiO2/SiC by Photocapacitance. In: Materials Science Forum: 8th European Conference on Silicon Carbide and Related Materials. 2011, Oslo, Norway: Trans Tech Publications Ltd.
• Al Hinai M, Wright N, Horsfall A, Hassanien R, Horrocks B, Houlton A. Ultra-sensitive hydrogen gas sensing using DNA-templated palladium nanowires. In: IEEE Sensors. 2011, Limerick, Ireland: IEEE.
• Bhatnagar P, Horsfall AB, Wright NG, O'Neill AG, Vassilevski KV, Johnson CM. Effective edge termination design in SiCVJFET. In: Silicon Carbide and Related Materials: 5th European Conference on Silicon Carbide and Related Materials. 2005, Bologna, Italy: Trans Tech Publications Ltd.
• Chen CC, Horsfall AB, Wright NG, O'Neill AG. Optimisation of heterostructure bipolar transistors in SiC. In: Silicon Carbide and Related Materials: 5th European Conference on Silicon Carbide and Related Materials. 2005, Bologna, Italy: Trans Tech Publications Ltd.
• Dos Santos JMM, Horsfall AB, Pina JCP, Wright NG, O'Neill AG, Wang K, Soare SM, Bull SJ, Terry JG, Walton AJ, Gundlach AM, Stevenson JTM. Calibration and optimization of interconnect based MEMS test structures for predicting thermo-mechanical stress in metallization. In: 42nd Annual IEEE International Reliability Physics Symposium. 2004, Phoenix, Arizona, USA: IEEE.
• dos Santos JMM, Wang K, Soare SM, Bull SJ, Horsfall AB, Wright NG. Hinge sensitivity in a micro-rotating structure for predicting induced thermo mechanical stress in integrated circuit metal interconnects. In: Thin Films: Stresses and Mechanical Properties X. 2004, Boston, Massachusetts, USA: Materials Research Society.
• Soare S, Bull SJ, Horsfall A, dos Santos J, O'Neill AG, Wright NG. Assessment of aluminium thin films by nanindentation. In: Surface Engineering: Synthesis, Characterization and Applications. 2003, Boston, Massachusetts, USA: Materials Research Society.
• Soare S, Bull SJ, Oila A, O'Neill A, Wright N, Horsfal A, dos Santos J. Determination of mechanical parameters for rotating MEMS as a function of deposition method. In: Thin Films: Stresses and Mechanical Properties X. 2003, Boston, Massachusetts, USA: Materials Research Society Symposium.
• Soare S, Bull SJ, Oila A, O'Neill AG, Wright N, Horsfall A, Dos Santos J. Determination of mechanical parameters for rotating MEMS structures as a function of deposition method. In: Materials Research Society Symposium Proceedings: Thin Films - Stresses and Mechanical Properties X. 2003, Boston, Massachusetts, USA: Materials Research Society.
• Horsfall AB, Johnson CM, Wright NG, O'Neill AG. Optimisation of a 4H-SiC enhancement mode power JFET. In: Materials Science Forum: 4th European Conference on Silicon Carbide and Related Materials. 2003, Linkoping, Switzerland: Trans Tech Publications Ltd.
• Vassilevski KV, Horsfall AB, Johnson CM, Wright NG, O'Neill AG. 4H-SiC Schottky diodes with high on/off current ratio. In: International Conference on Silicon Carbide and Related Materials. 2002, Tsukuba, Japan: Trans Tech Publications Ltd.
• Soare SM, Bull SJ, Horefall A, Dos Santos J, O'Neill AG, Wright NG. Assessment of aluminium metallisation by nanoindentation. In: Materials Research Society Symposium: Surface Engineering Sythesis, Characterization and Applications. 2002, Boston, Massachusetts, USA: Materials Research Society.
• Blasciuc-Dimitriu C, Horsfall AB, Vassilevski KV, Johnson CM, Wright NG, O'Neill AG. Characterisation of the high temperature performance of 4H-SiC Schottky barrier diodes. In: Silicon Carbide and Related Materials: 4th Euopean Conference on Silicon Carbide and Related Materials (ECSCRM). 2002, Linkoping, Sweden: Trans Tech Publications Ltd.
• Phelps GJ, Wright NG, Chester EG, Johnson CM, O'Neill AG, Ortolland S, Horsfall AB, Vassilevski K, Gwilliam RM. Enhanced dopant diffusion effects in 4H silicon carbide. In: International Conference on Silicon Carbide and Related Materials. 2002, Tsukuba, Japan: Trans Tech Publications Ltd.
• Phelps GJ, Wright NG, Johnson CM, O'Neill AG, Ortolland SA. Enhanced nitrogen diffusion in 4H-SiC. Applied Physics Letters 2002, 80(2), 228-230.
• Phelps GJ, Wright NG, Chester EG, Johnson CM, O'Neill AG, Ortolland S, Horsfall A, Vassilevski K, Gwilliam RM, Coleman PG, Burrows CP. Enhanced nitrogen diffusion in 4H-SiC. Applied Physics Letters 2002, 80(2), 228-230.
• Horsfall AB, Johnson CM, Wright NG, O'Neill AG. Optimisation of a 4H-SiC enhancement mode power JFET. In: Silicon Carbide and Related Materials: 4th Euopean Conference on Silicon Carbide and Related Materials (ECSCRM). 2002, Linkoping, Sweden: Trans Tech Publications Ltd.
• Horsfall AB, Vassilevski KV, Johnson CM, Wright NG, O'Neill AG, Gwilliam RM. Optimisation of implanted guard-ring terminations in 4H-SiC Schottky diodes. In: International Conference on Silicon Carbide and Related Materials. 2002, Tsukuba, Japan: Trans Tech Publications Ltd.
• Vassilevski KV, Horsfall AB, Johnson CM, Wright NG, O'Neill AG. 4H-SiC Schottky diodes with high on-off current ratio. In: International Conference on Silicon Carbide and Related Materials. 2001.
• Horsfall AB, Ortolland S, Wright NG, Johnson CM, Knights AP. Double implanted power MESFET technology in 4H-SiC. Materials Science Forum 2001, 353-356, 707-710.
• Ortolland S, Wright NG, Johnson CM, Knights AP, Coleman PG, Burrows CP, Pidduck AJ. Effect of residual damage on carrier transport properties in a 4H-SiC double implanted bipolar junction transistor. Materials Science Forum 2001, 353-356, 567-570.
• Morrison DJ, Wright NG, Horsfall AB, Johnson CM, O'Neill AG, Knights AP, Hilton KP, Uren MJ. Effect of post-implantation anneal on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation. Solid-State Electronics 2000, 44(11), 1879-1885.
• Hossin M, Johnson CM, Wright NG, O'Neill AG. Evaluation of GaAs Schottky gate bipolar transistor (SGBT) by electrothermal simulation. Solid-State Electronics 2000, 44(1), 85-94.
• Wright NG, Johnson CM, ONeill AG, Horsfall AB, Ortoll S, Adachi K, Knights AP, Coleman PG. Implanted bipolar technology in 4H-SiC. Materials Research Society Symposium Proceedings 2000, 622, T1.7.1-T1.7.6.
• Wright NG, Johnson CM, O'Neill AG, Horsfall A, Ortolland S, Adachi K, Knights AP, Coleman PG. Implanted bipolar technology in 4H-SiC. In: 2000 MRS Spring Meeting Proceedings: Wide-Bandgap Electronic Devices. Symposium. 2000, San Francisco, CA, USA: Materials Research Society.
• Wright NG, Johnson CM, O'Neill AG, Horsfall A, Ortolland S, Adachi K, Phelps GJ, Knights AP, Coleman PG, Burrows CP. Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology. In: Materials Research Society Symposium - Proceedings 2000. 2000, Boston USA: Cambridge University Press.
• Morrison DJ, Pidduck AJ, Moore V, Wilding PJ, Hilton KP, Uren MJ, Johnson CM, Wright NG, O'Neill AG. Surface preparation for Schottky metal - 4H-SiC contacts formed on plasma-etched SiC. Semiconductor Science and Technology 2000, 15(12), 1107-1114.
• Morrison DJ, Hilton KP, Uren MJ, Wright NG, Johnson CM, O'Neill AG. Anomalous forward I-V characteristics of Ti/Au SiC Schottky barrier diodes. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 1999, 61-62(0), 345-348.
• Morrison DJ, Hilton KP, Uren MJ, Wright NG, Johnson CM, O'Neill AG. Anomalous forward I-V characteristics of Ti/Au SiC Schottky barrier diodes. In: 2nd European Conference on Silicon Carbide and Related Materials (ECSCRM). 1999, Montpellier, France: Elsevier SA.
• Ortolland S, Johnson CM, Wright NG, Morrison DJ, O'Neill AG. Optimisation of a power 4H-SiC SIT device for RF heating applications. In: 2nd European Conference on Silicon Carbide and Related Materials (ECSCRM). 1999, Montpellier, France: Elsevier SA.
• Wright NG, Johnson CM, O'Neill AG. Oxidation modelling for SiC. In: Wide-Bandgap Semiconductors for High-Power, High-Frequency, and High-Temperature Applications. 1999, San Francisco, California, USA: Materials Research Society.
• Adachi K, Johnson CM, Ortolland S, Wright NG, O'Neill AG. TCAD evaluation of double implanted 4H-SiC power bipolar transistors. Materials Science Forum: Silicon Carbide and Related Materials 1999 1999, 338-342, 1419-1422.