School of Engineering

Technology Computer Aided Design

Technology Computer Aided Design (TCAD)

Overview

Technology Computer-Aided Design (TCAD) is a method used to rapidly explore and optimise novel process and device concepts.

TCAD tools are used to predict the physical structure of devices formed during a semiconductor fabrication process (process TCAD) and the performance of the fabricated devices (device TCAD).

Industry uses TCAD extensively to reduce development costs and time to market. Predictive TCAD is made possible by developing simulation models that correctly describe the behaviour of materials and devices at the frontiers of technology.

‌The ETM group have developed some of the leading process TCAD models used worldwide. This is achieved by a combination of physical experiments, atomistic calculations, and basic theory. The resulting models are implemented in commercial software through a close cooperation with a leading TCAD software vendor. The models have been shown to predict device parameters for advanced CMOS, such as strained Si / SiGe technology, with minimal calibration. TCAD models have also been developed and used for

The models have been shown to predict device parameters for advanced CMOS, such as strained Si / SiGe technology, with minimal calibration. TCAD models have also been developed and used for optimisation of c-Si photovoltaic (PV) technology.

The Group are interested in applying these models to full (process and device TCAD, up to 3-D) optimisation of commercial c-Si PV technology.

Recent awards

Research Papers

See below for some papers or proceedings in this area published by NME Group members. You may need a subscription to view some of these articles.

  • Transfer of Physically-Based Models from Process to Device Simulations: Application to Advanced Strained Si/SiGe MOSFETs
    E.M. Bazizi, P.F. Fazzini, F. Cristiano, A. Pakfar, C. Tavernier, F. Payet, T. Skotnicki, C. Zechner, N. Zographos, D. Matveev, N.E.B. Cowern, N.S. Bennett, C. Ahn, and J.C. Yoon
    Proc. International Electron Device Meeting 2010 (IEEE, 2010)
  • Integrated process and device 'TCAD' for enhancement of c-Si solar cell efficiency
    C. Ahn, K. Drew, A. Cole, K.C. Heasman, L. Brown, and N.E.B. Cowern
    Proc. EUPVSEC, Valencia, 2010
  • Stress effects on impurity solubility in crystalline materials: A general model and density functional calculations for dopants in silicon C. Ahn, N.S. Bennett, S.T. Dunham, and N.E.B. Cowern
    Physical Review B 2009, 79, 073201
  • Overlayer stress effects on defect formation in Si and Ge
    N.E.B. Cowern, N.S. Bennett, C. Ahn, J.C. Yoon, S. Hamm, W. Lerch, H. Kheyrandish, F. Cristiano, and A. Pakfar
    Thin Solid Films, 2009, 518, 2442

Research Projects