EEE8018 : Advanced Electronic Devices (Inactive)
- Inactive for Year: 2019/20
- Module Leader(s): Professor Anthony O'Neill
- Owning School: Engineering
- Teaching Location: Newcastle City Campus
|Semester 1 Credit Value:||15|
To provide to specialist knowledge of electronic devices. To enable students to have a better understanding of state-of-the-art devices (e.g. transistors). To enable students to compare competing electronic technologies.
Outline Of Syllabus
Review of semiconductor device fundamentals: materials, pn junction, bipolar transistor, MOSFET, energy bands.
Introduction, physical and economic scale/complexity of semiconductor devices, MOFSET, typical dimensions, evolution, ITRS.
MOS Structure, semiconductor surface, metal oxide semiconductor, MOS electrostatics, depletion accumulation and inversion, body factor, MOS C-V curve.
MOSFET, 3 terminal MOS, 4 termianl MOS, MOSFET mode of operation, I-V characteristic, delay time, body effect, sub-threshold.
Integrated Circuit Manufacture, basic concepts, IC layout, lithography, PVD, CVD, epitaxy, CMP, etching, annealing, ion implantation, diffusion, sheet resistance.
Semiconductor to circuit, masks and mask design, transistor and IC cross sections, sequence of operations, simple MOSFET process flow, design rules.
Carrier transport, transconductance degradation, mobility, velocity-field, split CV, universal mobility, field dependence, device speed, injection velocity.
Short channel effects, impact of scaling of electrical characteristics, threshold Voltage roll-off, DIBL, scaling strategies, limits to scaling.
MOSFET Evolution, STI and LOCOS isolation, metal and polysilicon gates, LDD, SALICIDE, parasitics, halo doping, retrograde doping, strained Si, High-k dielectrics, FUSI gates.
Bipolar Transistor, pn junction, dc characteristic, Early effect, Gummel plot, polysilicon emitter, double poly, heterojunction bipolar (HBT), BiCMOS.
Metal Semiconductor Junction, Schottky contact, Ohmic contact.
III-V compound semiconductor devices, properties of silicon versus other semiconductors, MESFET, mode of operation, I-V characteristic, high frequency performance, heterojunctions, MODFETs, I-V characteristic, high frequency performance.
Advance material drawn from:
Solid State Theory
Schottky and Junction Field Effect Transistors
Power semiconductor devices
Wide band gap semiconductor devices
|Guided Independent Study||Assessment preparation and completion||24||0:30||12:00||Revision for final exam|
|Guided Independent Study||Assessment preparation and completion||1||3:00||3:00||Final exam|
|Scheduled Learning And Teaching Activities||Lecture||12||1:00||12:00||Tutorial|
|Scheduled Learning And Teaching Activities||Lecture||12||2:00||24:00||N/A|
|Guided Independent Study||Directed research and reading||12||2:00||24:00||Reading papers from technical journals relating to advanced material.|
|Guided Independent Study||Independent study||1||75:00||75:00||Reflecting on lecture material; writing up lecture notes referencing text books; tutorial questions.|
Jointly Taught With
Teaching Rationale And Relationship
Lectures provide core material and guidance for further reading. Seminars reinforce self-directed learning and private study for advanced material.
The format of resits will be determined by the Board of Examiners
|Module Code||Module Title||Semester||Comment|
Assessment Rationale And Relationship
The examination provides the opportunity for the student to demonstrate their knowledge and skills developed from the lecture course material, seminars and student directed learning.