Undergraduate

modules

Modules

EEE8018 : Advanced Electronic Devices (Inactive)

Semesters
Semester 1 Credit Value: 15
ECTS Credits: 8.0

Aims

To provide to specialist knowledge of electronic devices. To enable students to have a better understanding of state-of-the-art devices (e.g. transistors). To enable students to compare competing electronic technologies.

Outline Of Syllabus

Review of semiconductor device fundamentals: materials, pn junction, bipolar transistor, MOSFET, energy bands.

Introduction, physical and economic scale/complexity of semiconductor devices, MOFSET, typical dimensions, evolution, ITRS.

MOS Structure, semiconductor surface, metal oxide semiconductor, MOS electrostatics, depletion accumulation and inversion, body factor, MOS C-V curve.

MOSFET, 3 terminal MOS, 4 termianl MOS, MOSFET mode of operation, I-V characteristic, delay time, body effect, sub-threshold.

Integrated Circuit Manufacture, basic concepts, IC layout, lithography, PVD, CVD, epitaxy, CMP, etching, annealing, ion implantation, diffusion, sheet resistance.

Semiconductor to circuit, masks and mask design, transistor and IC cross sections, sequence of operations, simple MOSFET process flow, design rules.

Carrier transport, transconductance degradation, mobility, velocity-field, split CV, universal mobility, field dependence, device speed, injection velocity.

Short channel effects, impact of scaling of electrical characteristics, threshold Voltage roll-off, DIBL, scaling strategies, limits to scaling.

MOSFET Evolution, STI and LOCOS isolation, metal and polysilicon gates, LDD, SALICIDE, parasitics, halo doping, retrograde doping, strained Si, High-k dielectrics, FUSI gates.

Bipolar Transistor, pn junction, dc characteristic, Early effect, Gummel plot, polysilicon emitter, double poly, heterojunction bipolar (HBT), BiCMOS.

Metal Semiconductor Junction, Schottky contact, Ohmic contact.

III-V compound semiconductor devices, properties of silicon versus other semiconductors, MESFET, mode of operation, I-V characteristic, high frequency performance, heterojunctions, MODFETs, I-V characteristic, high frequency performance.

Advance material drawn from:

Solid State Theory
Schottky and Junction Field Effect Transistors
Memory
Power semiconductor devices
Wide band gap semiconductor devices

Teaching Methods

Teaching Activities
Category Activity Number Length Student Hours Comment
Guided Independent StudyAssessment preparation and completion240:3012:00Revision for final exam
Guided Independent StudyAssessment preparation and completion13:003:00Final exam
Scheduled Learning And Teaching ActivitiesLecture121:0012:00Tutorial
Scheduled Learning And Teaching ActivitiesLecture122:0024:00N/A
Guided Independent StudyDirected research and reading122:0024:00Reading papers from technical journals relating to advanced material.
Guided Independent StudyIndependent study175:0075:00Reflecting on lecture material; writing up lecture notes referencing text books; tutorial questions.
Total150:00
Jointly Taught With
Code Title
EEE3020Electronic Devices
PHY3026Electronic Devices
Teaching Rationale And Relationship

Lectures provide core material and guidance for further reading. Seminars reinforce self-directed learning and private study for advanced material.

Assessment Methods

The format of resits will be determined by the Board of Examiners

Exams
Description Length Semester When Set Percentage Comment
Written Examination1801A100N/A
Exam Pairings
Module Code Module Title Semester Comment
EEE3020Electronic Devices1N/A
Assessment Rationale And Relationship

The examination provides the opportunity for the student to demonstrate their knowledge and skills developed from the lecture course material, seminars and student directed learning.

Reading Lists

Timetable