EEE8103 : Electronic Device Fabrication
- Offered for Year: 2019/20
- Module Leader(s): Dr Sarah Olsen
- Owning School: Engineering
- Teaching Location: Newcastle City Campus
|Semester 2 Credit Value:||10|
To provide an advanced knowledge of electronic device manufacture; to explain the importance of yield and reliability; to consider future directions available to electronic device technology.
Outline Of Syllabus
Silicon Epitaxy -
Applications, vapour phase expitaxy, doping and autodoping; molecular beam epitaxy.
Polysilicon Deposition -
Applications, deposition process and rate, electrical characteristics, step coverage, oxidation of polysilicon.
Uses of thermal oxide and CVD oxide, growth and properties of dry and wet oxide, dopant distribution, oxide quality, CVD process, doped oxide and its applications, step coverage and planarisation; high-k dielectrics.
Uses and desired properties of metallization, evaporation and sputtering, aluminium, silicide and gold metalisation technology, general properties of mettalisation.
Types, etch rate, selectivity, anisotropy, uniformity, case study; reactive ion etching, process monitoring and end point detection, pattern transfer problems, defects and impurities, deep reactive ion etching.
Surface Contamination -
Particles and films, sources of contamination, cleaning methods; photoresist removal.
Process Monitoring -
Junction depth, resistivity and sheet resistance, Hall effect, majority carrier mobility, doping profiles, current-voltage characteristics, line width.
Deep Submicron Lithography -
G Line, I line, Deep UV, resolution, depth of focus, phase shift lithography, electron beam lithography, x-ray lithography, costs.
Need for planar process, CR delay, material system wish list, electromigration and reliability, median time to failure.
Doping Technology -
Ion implantation, equipment, masking, dopant profiles, channelling, implantation damage, annealing, diffusion doping.
New materials and technologies -
Novel gate stacks (metal gates, high k dielectrics, atomic layer deposition), new channel materials (strained Si/SiGe), SiC for high temperature electronics, advanced interconnect (Cu-low k), nanotechnology.
|Scheduled Learning And Teaching Activities||Lecture||12||2:00||24:00||N/A|
|Guided Independent Study||Assessment preparation and completion||24||0:30||12:00||Revision for final exam|
|Guided Independent Study||Assessment preparation and completion||1||2:00||2:00||Final exam|
|Guided Independent Study||Independent study||1||62:00||62:00||Writing up lecture notes; general reading|
Jointly Taught With
|EEE8019||Advanced Device Fabrication|
Teaching Rationale And Relationship
Lectures provide core material and guidance for further reading. Problem solving and practice are integrated into the core lecture structure.
The format of resits will be determined by the Board of Examiners
|Module Code||Module Title||Semester||Comment|
Assessment Rationale And Relationship
Exam provides opportunity for students to demonstrate their knowledge and skills developed from lecture course material.