EEE8123 : Advanced Electronic Devices
EEE8123 : Advanced Electronic Devices
- Offered for Year: 2026/27
- Module Leader(s): Professor Anthony O'Neill
- Lecturer: Dr Johannes Gausden
- Owning School: Engineering
- Teaching Location: Newcastle City Campus
Semesters
Your programme is made up of credits, the total differs on programme to programme.
| Semester 1 Credit Value: | 20 |
| ECTS Credits: | 10.0 |
| European Credit Transfer System | |
Pre-requisite
Modules you must have done previously to study this module
Pre Requisite Comment
N/A
Co-Requisite
Modules you need to take at the same time
Co Requisite Comment
N/A
Aims
To provide specialist knowledge of electronic devices. To enable students to have a better understanding of state-of-the-art devices (e.g. transistors) by explaining how devices work and classifying types of electronic device. To enable students to compare competing electronic technologies. To demonstrate the electronic device elements underpinning the smart phone as an exemplar electronic system. This will be achieved through lectures, tutorials and independent study. The skills obtained in this module are valuable for engineering careers in areas such as semiconductors, microelectronics and bioelectronics.
Outline Of Syllabus
This module introduces the important subject of electronic devices and in particular their physical aspects.
The focus will be on electronic devices used in contemporary electronic systems, such as the smartphone, memory stick and power electronics.
The course begins with introductory material on semiconductor physics to a level needed to describe electronic devices with mathematical precision. This will include underpinning equations for charge transport in solids together with a simplified but accurate quantum mechanical description of metals, insulators and semiconductors.
The next part of the course deals with material junctions such as metal/semiconductor and semiconductor/semiconductor junctions and builds to more complex structures such as metal/oxide/semiconductor (MOS) junctions and a detailed analysis of MOSFETs and CMOS that includes scaling issues up to state-of-the-art.
The final part of the course covers other electronic devices such as MESFETs, JFETs, HEMTs and bipolar transistors. Displays, memory and power transistors will also be covered.
Students will also gain experience and learn how to write a technical report through their assessment, by selecting the appropriate course content to describe, explain and analyse aspects of a contemporary electronic system.
Learning Outcomes
Intended Knowledge Outcomes
The mapping of certain AHEPv4 learning outcomes to each intended knowledge outcome is indicated in each point. By the end of the module a student will be able to:
Describe bond and band models of electronic structure of solids and compare their merit. Explain energy band structure and how it describes the electrical properties of crystalline solids. Define drift-diffusion equations to describe aspects of charge transport in solids. Use analysis to demonstrate current magnitudes for different engineered structures. (M1 and M2)
Explain how electronic properties are understood by classical and quantum descriptions. Understand that positive and negative charge carriers exist in semiconductors. Demonstrate how this leads to possibility of engineering electronic properties of semiconductors. (M1 and M2)
Explain how solids can be engineered to achieve specific electronic behaviour such as resistance to current, rectification of current, current and voltage gain. Use mathematical equations to determine and predict this behaviour. (M1)
Explain the physical operation of metal/semiconductor junctions and how this allows the engineering of contact resistance to be ohmic or rectifying. (M1 and M2)
Explain the physical operation of semiconductor/semiconductor junctions and how this allows the engineering of rectifiers and LEDs by doping in a pn junction, or can modulate conductivity and transistor gain in a heterojunction device. (M1 and M2)
Describe the operation of MOSFETs and how their I-V characteristics indicate performance improvements and limitations. Explain how MOSFETs are used to create CMOS logic and the evolution of the technology. Explain how MOSFETs are modified for use in memory storage and in power electronics (M1 and M2)
Describe the electron devices needed for displays and touchscreen. (M1 and M2)
Intended Skill Outcomes
The mapping of certain AHEPv4 learning outcomes to each intended skill outcome is indicated in each point. By the end of the module, it is expected students will be able to:
Ability to analyse electronic device operation from a physical perspective. (M1)
To compare competing semiconductor technologies (M2).
To understand trends in device evolution and recognise fundamental limits on performance. (M2)
To recognise challenges in the integration of complex elements and the need for engineering trade-offs. (M2)
To read and understand technical reports and engineering journals (M4)
To appreciate current engineering practise and innovation in electronic devices (M3,M4)
Teaching Methods
Teaching Activities
| Category | Activity | Number | Length | Student Hours | Comment |
|---|---|---|---|---|---|
| Scheduled Learning And Teaching Activities | Lecture | 16 | 2:00 | 32:00 | N/A |
| Guided Independent Study | Assessment preparation and completion | 1 | 30:00 | 30:00 | Writing of summative assessment report |
| Structured Guided Learning | Structured research and reading activities | 16 | 2:00 | 32:00 | Reading activity, including papers/reports provided on Canvas, to supplement knowledge of material taught in each week. |
| Structured Guided Learning | Structured research and reading activities | 20 | 1:00 | 20:00 | Completing tests from canvas |
| Scheduled Learning And Teaching Activities | Drop-in/surgery | 4 | 1:00 | 4:00 | One timetabled optional session for students to attend if they have any queries. |
| Guided Independent Study | Independent study | 1 | 82:00 | 82:00 | N/A |
| Total | 200:00 |
Teaching Rationale And Relationship
Lectures provide the core material and give students the opportunity to engage with set questions and query material covered in the lecture.
Problem solving is introduced through worked example tutorial (students encouraged to work in small groups). This is followed up with test sheets on Canvas (for independent problem solving). Students who want further support from the lecturer have the option of email Q&A, zoom or in person session. All queries are responded to within 24 hours
Lecturers own research is presented in many lectures to illustrate current engineering practise and achievement.
Reading Lists
Assessment Methods
The format of resits will be determined by the Board of Examiners
Other Assessment
| Description | Semester | When Set | Percentage | Comment |
|---|---|---|---|---|
| Report | 1 | M | 100 | Assignment assessing advanced electronic devices, 3000 words. |
Formative Assessments
Formative Assessment is an assessment which develops your skills in being assessed, allows for you to receive feedback, and prepares you for being assessed. However, it does not count to your final mark.
| Description | Semester | When Set | Comment |
|---|---|---|---|
| Prob solv exercises | 1 | M | N/A |
Assessment Rationale And Relationship
The summative assessment report allows students to demonstrate their knowledge of module material, e.g. through their selection of material chosen and depth of coverage. The report also allows students to apply their knowledge and thinking to examine results only given by a closed analytic formula in lectures. This can involve examining the influence of each parameter on device performance or how scaling dimensions may influence device performance metrics. It can also show the limits of analysis presented in class with the option to go further.
The formatively assessed tutorial are available on Canvas. This encourages students to study each topic after it is completed and prepare them for the assessed report.
The summative assessment report allows students to demonstrate their knowledge of module material, e.g. through
their selection of material chosen and depth of coverage (M1). The report also allows students to apply their knowledge and thinking to examine results only given by a closed analytic formula in lectures (M2). This can involve examining the influence of each parameter on device performance or how scaling dimensions may influence device performance metrics (M2). It can also show the limits of analysis presented in class with the option to go further (M1, M2). The formatively assessed tutorial are available on Canvas. This encourages students to study each topic after it is completed and prepare them for the assessed report (M1, M2)
Timetable
- Timetable Website: www.ncl.ac.uk/timetable/
- EEE8123's Timetable
Past Exam Papers
- Exam Papers Online : www.ncl.ac.uk/exam.papers/
- EEE8123's past Exam Papers
General Notes
N/A
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Disclaimer
The information contained within the Module Catalogue relates to the 2026 academic year.
In accordance with University Terms and Conditions, the University makes all reasonable efforts to deliver the modules as described.
Modules may be amended on an annual basis to take account of changing staff expertise, developments in the discipline, the requirements of external bodies and partners, staffing changes, and student feedback. Module information for the 2027/28 entry will be published here in early-April 2027. Queries about information in the Module Catalogue should in the first instance be addressed to your School Office.