Research

Kelvin is a member of the Emerging Technologies and Materials research group.

Publications

• Mojarad SA, Kwa KSK, Goss JP, Zhou Z, Ponon NK, Appleby DJR, Al Hamadany RAS, O'Neill A. A comprehensive study on the leakage current mechanisms of Pt/SrTiO₃/Pt capacitor. Journal of Applied Physics 2012, 111(1), 014503.
• Mojarad SA, Goss JP, Kwa KSK, Petrov PK, Zou B, Alford N, O'Neill A. Anomalous resistive switching phenomenon. Journal of Applied Physics 2012, 112(12), 124516.
• Mojarad SA, Goss JP, Kwa KSK, Zhou ZY, Al-Hamadany RAS, Appleby DJR, Ponon NK, O'Neill A. Leakage current asymmetry and resistive switching behavior of SrTiO3. Applied Physics Letters 2012, 101(17), 173507.
• Za'bah NF, Kwa KSK, Bowen L, Mendis B, O'Neill A. Top-down fabrication of single crystal silicon nanowire using optical lithography. Journal of Applied Physics 2012, 112(2), 024309.
• Alatise O, Kwa K, Olsen S, O'Neill A. A design methodology for maximizing the voltage gain of strained Si MOSFETs using the thickness of the silicon-germanium strain relaxed buffer as a design parameter. In: International Semiconductor Device Research Symposium (ISDRS). 2009, College Park, Maryland, USA.
• Olsen SH, O'Neill AG, Chattopadhyay S, Kwa KSK, Driscoll LS, Norris DJ, Cullis AG, Robbins DJ, Zhang J. Evaluation of strained Si/SiGe material for high performance CMOS. Journal of Applied Physics 2004, 95(10), 5931-5933.
• Driscoll L, Olsen S, Chattopadhyay S, O'Neill A, Kwa K, Dobrosz P, Bull S. Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters. In: High-Mobility Group IV Materials and Devices. 2004, San Francisco, California, USA: Materials Research Society.
• Olsen S, Driscoll L, Kwa K, Chattopadhyay S, O'Neill A, Waite A, Tang Y, Evans A, Norris D, Cullis A, Paul D, Robbins D. High performance strained Si.SiGe NMOSFETs using a novel CMOS architecture. In: Third International Conference on SiGe(C) Epitaxy and Heterostructures. 2003, Santa Fe, New Mexico, USA.
• Olsen SH, Driscoll LS, Kwa KSK, Chattopadhyay S, O'Neill AG. High performance strained Si/SiGe n-channel MOSFETs: impact of alloy composition and layer architecture. In: International Conference on Solid State Devices and Materials (SSDM). 2003, Tokyo, Japan.
• Olsen SH, Driscoll LS, Kwa KSK, Chattopadhyay S, O'Neill AG, Waite AM, Tang YT, Evans AGR, Norris DJ, Cullis AG, Paul DJ, Robbins DJ. High performance strained Si/SiGe nMOSFETs using a novel CMOS architecture. In: International Conference on Silicon Epitaxy and Heterostructures (ICSI3). 2003, Santa Fe, New Mexico, USA.
• Olsen SHJ, O'Neill AG, Chattopadhyay S, Kwa KSK, Driscoll LS, Bull SJ, Waite AM, Tang YT, Evans AGR, Norris DJ, Cullis AG, Zhang J. Impact of Virtual Substrate Ge Composition on Strained Si MOSFET Performance. In: Electronic Materials Conference. 2003, Salt Lake City, Utah, USA.
• Olsen SH, O'Neill AG, Chattopadhyay S, Kwa KSK, Driscoll LS, Bull SJ, Waite AM, Tang YT, Evans AGR, Norris DJ, Cullis AG, Zhang J. Impact of virtual substrate Ge composition on strained Si MOSFET performance. In: Electronic Materials Conference (EMC). 2003, Salt Lake City, Utah, USA.
• Kwa KSK, Chattopadhyay S, Olsen SH, Driscoll LS, O'Neill AG. Optimisation of channel thickness in strained Si/SiGe MOSFETs. In: 33rd European Solid-State Device Research. 2003, Estoril, Portugal: IEEE.
• Kwa K, Chattopadhyay S, Olsen S, Driscoll L, O'Neill AG. Optimisation of Channel Thickness in Strained Si/SiGe MOSFETs. In: Proc ESSDERC. 2003, Lisbon, Portugal.
• Kwa KSK, Chattopadhyay S, Olsen SH, Driscoll LS, O'Neill AG. Optimisation of channel thickness in strained Si/SiGe MOSFETs. In: 33rd European Solid-State Device Research Conference (ESSDERC). 2003, Estoril, Portugal: IEEE.
• Kwa KS, ONeill AG. Diffusion of Boron in Stained Si-SiGe. In: PREP Conference. 2001, Keele.
• Ramadan S, Kwa K, King P, O'Neill A. Reliable Fabrication of Sub-10 nm Silicon Nanowires by Optical Lithography. Nanotechnology 2016, 27(42), 425302.
• Ponon NK, Appleby DJR, Arac E, King PJ, Ganti S, Kwa KSK, O'Neill A. Effect of deposition conditions and post deposition anneal on reactively sputtered titanium nitride thin films. Thin Solid Films 2015, 578, 31-37.
• Za'bah NF, Kwa KSK, O'Neill A. Electrical characterisation of highly doped triangular silicon nanowires. In: 5th International Conference on Mechanical and Manufacturing Engineering (ICME 2014). 2014, Bandung, Indonesia: Trans Tech Publications Ltd.
• Appleby DJR, Ponon NK, Kwa KSK, Zou B, Petrov PK, Wang T, Alford NM, O'Neill A. Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature. Nano Letters 2014, 14(7), 3864-3868.
• King PJ, Arac E, Ganti S, Ramadan S, Kwa KSK, Barlow AJ, Cumpson PJ, Robertson J, O'Neill AG. Fermi Level De-pinning In Metal-Semiconductor Contacts Via Nanometre-scale ALD Dielectric Films. In: 12th International Baltic ALD 2014. 2014, Helsinki, Finland.
• Appleby DJR, Ponon NK, Kwa KSK, Ganti S, Hannemann U, Petrov PK, Alford NM, O'Neill AG. Ferroelectric properties in thin film barium titanate grown using pulsed laser deposition. Journal of Applied Physics 2014, 116, 124105.
• Ponon NK, Appleby DJR, Arac E, Kwa KSK, Goss JP, Hannemann U, Petrov PK, Alford NM, O'Neill A. Impact of Crystalline Orientation on the Switching Field in Barium Titanate Using Piezoresponse Force Spectroscopy. In: MRS Fall Meeting and Exhibit. 2014, Boston, MA, USA: Cambridge University Press.
• King PJ, Arac E, Ganti S, Kwa KSK, Ponon N, O'Neill AG. Improving metal/semiconductor conductivity using AlO_x interlayers on n-type and p-type Si. Applied Physics Letters 2014, 105(5), 052101.
• O'Neill A, Appleby D, Ponon N, Kwa K. Towards steep slope MOSFETs using ferroelectric negative capacitance. In: 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). 2014, Guilin, China: IEEE.
• Ponon N, Appleby D, Mojarad SA, Kwa K, O'Neill A. Ferroelectrics for nanoelectronics. In: Intel ERIC. 2012, Dublin, Ireland.