Skip to main content

Module

PHY8039 : Electronic Device Fabrication (Inactive)

  • Inactive for Year: 2023/24
  • Module Leader(s): Dr Sarah Olsen
  • Owning School: Mathematics, Statistics and Physics
  • Teaching Location: Newcastle City Campus
Semesters

Your programme is made up of credits, the total differs on programme to programme.

Semester 2 Credit Value: 15
ECTS Credits: 8.0
European Credit Transfer System

Aims

To provide an advanced knowledge of electronic device manufacture; to explain the importance of yield and reliability; to consider future directions available to electronic device technology.

Outline Of Syllabus

Silicon Epitaxy -
Applications, vapour phase expitaxy, doping and autodoping; molecular beam epitaxy.

Polysilicon Deposition -
Applications, deposition process and rate, electrical characteristics, step coverage, oxidation of polysilicon.

Oxidation -
Uses of thermal oxide and CVD oxide, growth and properties of dry and wet oxide, dopant distribution, oxide quality, CVD process, doped oxide and its applications, step coverage and planarisation; high-k dielectrics.

Metallisation -
Uses and desired properties of metallization, evaporation and sputtering, aluminium, silicide and gold mettalisation technology, general properties of mettalisation.

Etching -
Types, etch rate, selectivity, anisotropy, uniformity, case study; reactive ion etching, process monitoring and end point detection, pattern transfer problems, defects and impurities, deep reactive ion etching.

Surface Contamination -
Particles and films, sources of contamination, cleaning methods; photoresist removal.

Process Monitoring -
Junction depth, resistivity and sheet resistance, Hall effect, majority carrier mobility, doping profiles, current-voltage characteristics, line width.

Deep Submicron Lithography -
G Line, I line, Deep UV, resolution, depth of focus, phase shift lithography, electron beam lithography, x-ray lithography, costs.

Interconnect -
Need for planar process, CR delay, material system wish list, electromigration and reliability, median time to failure.

Doping Technology -
Ion implantation, equipment, masking, dopant profiles, channelling, implantation damage, annealing, diffusion doping.

New materials and technologies -
Novel gate stacks (metal gates, high k dielectrics, atomic layer deposition), new channel materials (strained Si/SiGe), SiC for high temperature electronics, advanced interconnect (Cu-low k), nanotechnology.

Teaching Methods

Teaching Activities
Category Activity Number Length Student Hours Comment
Scheduled Learning And Teaching ActivitiesLecture121:0012:00Tutorial
Scheduled Learning And Teaching ActivitiesLecture122:0024:00N/A
Guided Independent StudyAssessment preparation and completion360:3018:00Revision for final exam
Guided Independent StudyAssessment preparation and completion13:003:00Final exam
Guided Independent StudyDirected research and reading122:0024:00Reading specified articles and extended material in preparation for lectures and tutorials.
Scheduled Learning And Teaching ActivitiesDrop-in/surgery120:102:00Office hours
Guided Independent StudyIndependent study167:0067:00Writing up lecture notes; general reading.
Total150:00
Jointly Taught With
Code Title
EEE8103Electronic Device Fabrication
EEE8125Advanced Device Fabrication
Teaching Rationale And Relationship

Lectures provide core material and guidance for further reading. Seminars reinforce lectures, SDL and private study. Problem solving and practice are integrated into the core lecture structure. Office hours (two per week) will provide an opportunity for more direct contact between individual students and the lecturer: a typical student might spend a total of one or two hours over the course of the module, either individually or as part of a group.

Assessment Methods

The format of resits will be determined by the Board of Examiners

Exams
Description Length Semester When Set Percentage Comment
Written Examination1802A100N/A
Exam Pairings
Module Code Module Title Semester Comment
2N/A
Advanced Device Fabrication2N/A
Assessment Rationale And Relationship

Exam provides opportunity for student to demonstrate their knowledge and skills developed from lecture course material, seminars and student directed learning.

Reading Lists

Timetable