Skip to main content


EEE8123 : Advanced Electronic Devices

  • Offered for Year: 2022/23
  • Module Leader(s): Professor Anthony O'Neill
  • Owning School: Engineering
  • Teaching Location: Newcastle City Campus
Semester 1 Credit Value: 20
ECTS Credits: 10.0


To provide to specialist knowledge of electronic devices. To enable students to have a better understanding of state-of-the-art devices (e.g. transistors). To enable students to compare competing electronic technologies. To understand the electronic device elements underpinning the smart phone as an exemplar electronic system.

Outline Of Syllabus

Part 1
Introduction to electronic devices. Conduction in solids; p-n junction; MOSFET, bipolar transistor; solid state theory

Part 2
Electronic system exemplar: smartphone. Review of semiconductor properties, sheet resistance.

Semiconductor Physics: Bond & Band models; Ohm’s law; Einstein Relation; Drift and diffusion current; Current magnitudes; charge transport in solids; Wave-particle duality; DeBroglie wavelength; Heisenberg uncertainty principle; The Quantum mechanics concept; Tunnelling; E-K bands in solids

Junctions: Metal-semiconductor junction, Schottky contact, Ohmic contact.LED, photodiode, Smartphone: camera, optical and electromechanical sensors.
p-n junction: Ideal diode I-V characteristic; Dynamic equilibrium; Built-in voltage; Current flow in p-n junctions;

Shockley’s equation; Ideality factor; Generation – Recombination; Small signal equivalent circuit; Characterization of semiconductor devices; Tunnel diode;

MOS Junction, MOS electrostatics, depletion accumulation and inversion, MOS C-V curve.

MOSFET: Depletion, accumulation and inversion; Importance of Fermi Energy position; Mode of operation; Pinch-off; Threshold voltage; Enhancement and depletion mode; Analysis of operation; I-V relation; Short channel effects; Transistor delay time; Small signal equivalent circuit; sub-threshold, transistor and IC cross sections.

CMOS: Short channel effects, impact of scaling of electrical characteristics, threshold Voltage, DIBL, scaling strategies, limits to scaling.

Carrier transport, transconductance degradation, mobility, velocity-field, universal mobility, field dependence.
MOSFET Evolution, STI and LOCOS isolation, metal and polysilicon gates, LDD, parasitics, halo doping, retrograde doping, strained Si, High-k dielectrics, physical and economic scale/complexity of semiconductor devices, evolution, ITRS.

Bipolar Transistor. Simple description of operation, Definitions of gain; Derivation of expressions for base, collector and emitter current; D.C. characteristic, dc characteristic, Early effect, Gummel plot, Bipolar evolution, heterojunction bipolar (HBT).

Part 3
Displays, OLED, touchscreen, digitizer (smartphone) Memory: DRAM, SRAM, flash
Power transistors, blocking voltage, p-i-n, vertical MOSFET, figure of merit, specific on-resistance, wide band gap

Teaching Methods

Teaching Activities
Category Activity Number Length Student Hours Comment
Scheduled Learning And Teaching ActivitiesLecture162:0032:004x2hr lectures per week over 4 weeks
Structured Guided LearningLecture materials201:0020:00Completing tests from canvas
Guided Independent StudyAssessment preparation and completion130:0030:00preparing 3000 word report for assessment
Structured Guided LearningStructured research and reading activities203:0060:00Reading activity to supplement knowledge of material taught in each week.
Scheduled Learning And Teaching ActivitiesWorkshops42:008:00Online synchronous tutorials, including worked examples.
Guided Independent StudyIndependent study150:0050:00Reviewing lecture notes; general reading
Teaching Rationale And Relationship

The online sessions provide core material and guidance for further reading. Workshops reinforce self-directed learning and private study for advanced material.

Alternatives will be offered to students unable to be present-in-person due to the prevailing C-19 circumstances. Student’s should consult their individual timetable for up-to-date delivery information.

Assessment Methods

The format of resits will be determined by the Board of Examiners

Other Assessment
Description Semester When Set Percentage Comment
Report1M100Assignment assessing advanced electronic devices, 3000 words.
Formative Assessments
Description Semester When Set Comment
Prob solv exercises1M5 TESTS ON PART 1 AND 9 TESTS ON PART 2
Assessment Rationale And Relationship

The coursework provides the opportunity for the student to demonstrate their knowledge and skills developed from the course material, on-line seminars and student directed learning.

Reading Lists