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EEE3026 : Electronic Devices and Semiconductor Technology

  • Offered for Year: 2024/25
  • Module Leader(s): Dr Sarah Olsen
  • Lecturer: Dr Konstantin Vasilevskiy, Professor Anthony O'Neill
  • Owning School: Engineering
  • Teaching Location: Newcastle City Campus

Your programme is made up of credits, the total differs on programme to programme.

Semester 1 Credit Value: 10
Semester 2 Credit Value: 10
ECTS Credits: 10.0
European Credit Transfer System


To provide specialist knowledge of electronic devices and related components.

To enable students to have a better understanding of state-of-the-art devices (e.g. transistors) and their applications.

To enable students to compare competing electronic and related technologies.

To provide a specialist knowledge of processes used in chip manufacturing.

To show students how electronic devices are fabricated in a clean room.

To enable students to experience fabrication processes and characterisation of devices in a clean room environment.

Outline Of Syllabus

Introduction to electronic devices; electronic system exemplar: smartphone.
Junctions: Metal-semiconductor junction, Schottky contact, Ohmic contact, p-n junction, LED, photodiode;, Smartphone: camera, optical and MEMS (electromechanical) sensors.
MOS Junction. MOS electrostatics, depletion accumulation and inversion
MOSFET: mode of operation, I-V characteristic, sub-threshold, transistor and IC cross sections.
CMOS: Inverter, power dissipation, short channel effects, impact of scaling of electrical characteristics, threshold Voltage, electrostatic integrity, scaling strategies, limits to scaling.
Carrier transport: transconductance degradation, mobility components, velocity-field, universal mobility, field dependence, short channel regime.
MOSFET Evolution: STI and LOCOS isolation, metal and polysilicon gates, LDD, parasitics, halo doping, retrograde doping, strained Si, high-k dielectrics, finFETs, nanosheet FETs,. More than Moore, passives, SoC, 3D-integration
III-V compound semiconductor devices:, properties of silicon versus other semiconductors, MESFET, mode of operation, I-V characteristic, heterojunctions, MODFETs, I-V characteristic
Bipolar Transistor: dc characteristic, Gummel plot, Bipolar evolution, heterojunction bipolar (HBT).
Displays: OLED, touchscreen, digitizer (smartphone)
Memory: addressable arrays, DRAM, SRAM, flash
Power transistor: vertical topologies, UMOS, DMOS, specific on-resistance, analysis using pin, Si versus wide bandgap semiconductor
Device Fabrication:. Wafer fabs, mask design, process flow
Patterning: lithography, resolution, alignment, photoresist, e-beam, EUV, maskless
Starting Material: wafer engineering, crystal structure, Czochralski growth, defects,
Material addition: Thin films,: chemical vapour deposition (dielectrics, polysilicon, metals), physical vapour deposition (evaporation, sputtering), atomic layer deposition, metallisation options
Material subtraction:. Wet and dry etches, etching parameters, reactive ion etching, deep reactive ion etching, chemical mechanical polishing
Thermal processing:. Tube furnaces, RTP, wet and dry oxidation, oxide quality, local oxidation,. diffusion, Doping, ion implantation, annealing
Interconnects: multilevel metallisation, low-k dielectrics, reliability, CR delay

Teaching Methods

Teaching Activities
Category Activity Number Length Student Hours Comment
Guided Independent StudyAssessment preparation and completion15:305:30Preparation and completion of formative assessment on device fabrication
Guided Independent StudyAssessment preparation and completion124:0024:00Preparing 2000 word report for assessment on electronic devices.
Guided Independent StudyAssessment preparation and completion11:301:30Written Exam
Guided Independent StudyAssessment preparation and completion120:0020:00Preparation for written exam on device fabrication.
Scheduled Learning And Teaching ActivitiesLecture192:0038:00Lectures in semester 1 and 2
Structured Guided LearningStructured research and reading activities101:0010:00Completing tests from canvas (semester 1)
Structured Guided LearningStructured research and reading activities192:0038:00Reading and reflecting to supplement understanding of material taught
Scheduled Learning And Teaching ActivitiesWorkshops52:0010:00Practical sessions on chip fabrication and characterisation.
Guided Independent StudyReflective learning activity53:0015:00Reflection and notes on practical session.
Guided Independent StudyIndependent study138:0038:00Reviewing lecture notes; general reading
Teaching Rationale And Relationship

Lectures provides the core material weekly problem solving sessions in semester 1 give students the opportunity to query material taught each week. Face-to-face lectures can be replaced with online synchronous sessions supported by non-synchronous videos if the public health situation requires it.

Practical clean room sessions in semester 2 provide an opportunity to gain experience of clean room processes used in chip fabrication and the techniques used in the characterisation of electronic devices. Taught lecture material covering chip fabrication processes provide the theory for the practical work.

Assessment Methods

The format of resits will be determined by the Board of Examiners

Description Length Semester When Set Percentage Comment
Written Examination902A50In-person, closed-book exam.
Exam Pairings
Module Code Module Title Semester Comment
Advanced Device Fabrication2N/A
Other Assessment
Description Semester When Set Percentage Comment
Report1M502000 word written assignment on mobile phones
Zero Weighted Pass/Fail Assessments
Description When Set Comment
Oral ExaminationMIn Semester 2 - Oral assessment to demonstrate understanding of practical work (15 minutes)
Assessment Rationale And Relationship

The coursework provides the opportunity for the student to demonstrate their knowledge and skills developed from the electronic device (semester 1) lecture course material. The exam in semester 2 assesses the student knowledge of device fabrication, while the formative oral assessment in semester 2 ensures the student has engaged and acquired key knowledge from the practical device fabrication and characterisation experience.

Reading Lists