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EEE3026 : Electronic Devices and Semiconductor Technology

  • Offered for Year: 2023/24
  • Module Leader(s): Dr Sarah Olsen
  • Lecturer: Professor Anthony O'Neill, Dr Konstantin Vasilevskiy
  • Owning School: Engineering
  • Teaching Location: Newcastle City Campus

Your programme is made up of credits, the total differs on programme to programme.

Semester 1 Credit Value: 10
Semester 2 Credit Value: 10
ECTS Credits: 10.0
European Credit Transfer System


To provide specialist knowledge of electronic devices and related components.

To enable students to have a better understanding of state-of-the-art devices (e.g. transistors) and their applications.

To enable students to compare competing electronic and related technologies.

To provide a specialist knowledge of processes used in chip manufacturing.

To show students how electronic devices are fabricated in a clean room.

To enable students to experience fabrication processes and characterisation of devices in a clean room environment.

Outline Of Syllabus

Introduction to electronic devices; electronic system exemplar: smartphone.
Junctions: Metal-semiconductor junction, Schottky contact, Ohmic contact, p-n junction, LED, photodiode;, Smartphone: camera, optical and MEMS (electromechanical) sensors.
MOS Junction. MOS electrostatics, depletion accumulation and inversion
MOSFET: mode of operation, I-V characteristic, sub-threshold, transistor and IC cross sections.
CMOS: Inverter, power dissipation, short channel effects, impact of scaling of electrical characteristics, threshold Voltage, electrostatic integrity, scaling strategies, limits to scaling.
Carrier transport: transconductance degradation, mobility components, velocity-field, universal mobility, field dependence, short channel regime.
MOSFET Evolution: STI and LOCOS isolation, metal and polysilicon gates, LDD, parasitics, halo doping, retrograde doping, strained Si, high-k dielectrics, finFETs, nanosheet FETs,. More than Moore, passives, SoC, 3D-integration
III-V compound semiconductor devices:, properties of silicon versus other semiconductors, MESFET, mode of operation, I-V characteristic, heterojunctions, MODFETs, I-V characteristic
Bipolar Transistor: dc characteristic, Gummel plot, Bipolar evolution, heterojunction bipolar (HBT).
Displays: OLED, touchscreen, digitizer (smartphone)
Memory: addressable arrays, DRAM, SRAM, flash
Power transistor: vertical topologies, UMOS, DMOS, specific on-resistance, analysis using pin, Si versus wide bandgap semiconductor
Device Fabrication:. Wafer fabs, mask design, process flow
Patterning: lithography, resolution, alignment, photoresist, e-beam, EUV, maskless
Starting Material: wafer engineering, crystal structure, Czochralski growth, defects,
Material addition: Thin films,: chemical vapour deposition (dielectrics, polysilicon, metals), physical vapour deposition (evaporation, sputtering), atomic layer deposition, metallisation options
Material subtraction:. Wet and dry etches, etching parameters, reactive ion etching, deep reactive ion etching, chemical mechanical polishing
Thermal processing:. Tube furnaces, RTP,. wOxidation: wet and dry oxidation, oxide quality, local oxidation,. diffusion, Doping, ion implantation, annealing
Interconnects: multilevel metallisation, low-k dielectrics, reliability, CR delay

Teaching Methods

Teaching Activities
Category Activity Number Length Student Hours Comment
Guided Independent StudyAssessment preparation and completion120:0020:00Preparation for written exam on device fabrication.
Scheduled Learning And Teaching ActivitiesLecture192:0038:00Lectures in semester 1 and 2
Guided Independent StudyAssessment preparation and completion15:005:00Preparation for formative assessment on device fabrication
Guided Independent StudyAssessment preparation and completion124:0024:00Preparing 3000 word report for assessment on electronic devices.
Guided Independent StudyAssessment preparation and completion12:002:00Written Exam
Structured Guided LearningStructured research and reading activities192:0038:00Reading and reflecting to supplement understanding of material taught
Structured Guided LearningStructured research and reading activities101:0010:00Completing tests from canvas (semester 1)
Scheduled Learning And Teaching ActivitiesWorkshops52:0010:00Practical sessions on chip fabrication and characterisation.
Guided Independent StudyReflective learning activity53:0015:00Reflection and notes on practical session.
Guided Independent StudyIndependent study138:0038:00Reviewing lecture notes; general reading
Teaching Rationale And Relationship


Assessment Methods

The format of resits will be determined by the Board of Examiners

Description Length Semester When Set Percentage Comment
Written Examination1202A50In-person, closed-book exam.
Other Assessment
Description Semester When Set Percentage Comment
Report1M503000 word written assignment on mobile phones
Zero Weighted Pass/Fail Assessments
Description When Set Comment
Aural ExaminationMIn Semester 2 - Oral assessment to demonstrate understanding of practical work
Formative Assessments

Formative Assessment is an assessment which develops your skills in being assessed, allows for you to receive feedback, and prepares you for being assessed. However, it does not count to your final mark.

Description Semester When Set Comment
Prob solv exercises1MWeekly tests and answers provided on Canvas.
Assessment Rationale And Relationship

The coursework provides the opportunity for the student to demonstrate their knowledge and skills developed from the electronic device (semester 1) lecture course material. The exam in semester 2 assesses the student’s knowledge of device fabrication, while the formative oral assessment in semester 2 ensures the student has engaged and acquired key knowledge from the practical device fabrication and characterisation experience.

Reading Lists